N-Channel RF Amplifier

This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process 50.

N-Channel RF Amplifier

This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process 50.

PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS

N-Channel JFETs

JFET PRO ELECTRON SERIES

文件：120.95 Kbytes Page：2 Pages

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：托盘 描述：JFET N-CH 30V 50MA TO92 分立半导体产品 晶体管 - FET，MOSFET - 射频

射频结栅场效应晶体管(RF JFET)晶体管 N-Ch RF Amplifier 30Vdg -30Vgs 50mA

JFET N-CH 30V 50MA TO92

N-Channel RF Amplifier

文件：79.58 Kbytes Page：6 Pages

JFET N-CH 30V 50MA TO92

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：托盘 描述：JFET N-CH 30V 50MA TO92 分立半导体产品 晶体管 - FET，MOSFET - 射频

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

Complementary Silicon Plastic Power Transistors

6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80–100 VOLTS 65 WATTS . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage —