| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BF245 | N-Channel Amplifiers N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. | FAIRCHILD 仙童半导体 |   | |
BF245 | JFET VHF/UHF Amplifiers N-Channel - Depletion JFET VHF/UHF Amplifiers N–Channel — Depletion | ONSEMI 安森美半导体 | | |
BF245 | N-CHANNEL JUNCTION FET DESCRIPTION BF245 is N-Channel Junction Field Effect Transistor designed for VHF/UHF amplifiers and mixer. | MICRO-ELECTRONICS | | |
BF245 | N-Channel junction field-Effect Transistors N-Channel Silicon Junction Field-Effect Transistors BF 245 A, B and C are N-channel junction field-effect transistors in plastic package similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in dc, AF and RF amplifiers. | SIEMENS 西门子 | | |
BF245 | N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR | MICRO-ELECTRONICS | | |
BF245 | Trans JFET N-CH 30V 100mA 3-Pin TO-92 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BF245 | N-Channel junction field-Effect Transistors | INFINEON 英飞凌 | | |
N-Channel junction field-Effect Transistors N-Channel Silicon Junction Field-Effect Transistors BF 245 A, B and C are N-channel junction field-effect transistors in plastic package similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in dc, AF and RF amplifiers. | SIEMENS 西门子 | | ||
IM-Channel Junction Field-Effect Transistors N-Channel Silicon Junction Field-Effect Transistors BF 245 A, B and C are N-channel junction field-effect transistors in plastic package similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in dc, AF and RF amplifiers. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
JFET VHF/UHF Amplifiers N-Channel - Depletion JFET VHF/UHF Amplifiers N–Channel — Depletion | ONSEMI 安森美半导体 | | ||
N-Channel Amplifiers N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. | FAIRCHILD 仙童半导体 | | ||
N-channel silicon field-effect transistors | ETC 知名厂家 | ETC | | |
N-channel silicon field-effect transistors | ETC 知名厂家 | ETC | | |
N-Channel Amplifiers N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. | FAIRCHILD 仙童半导体 | | ||
JFET VHF/UHF Amplifiers N-Channel - Depletion JFET VHF/UHF Amplifiers N–Channel — Depletion | ONSEMI 安森美半导体 | | ||
IM-Channel Junction Field-Effect Transistors N-Channel Silicon Junction Field-Effect Transistors BF 245 A, B and C are N-channel junction field-effect transistors in plastic package similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in dc, AF and RF amplifiers. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-Channel junction field-Effect Transistors N-Channel Silicon Junction Field-Effect Transistors BF 245 A, B and C are N-channel junction field-effect transistors in plastic package similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in dc, AF and RF amplifiers. | SIEMENS 西门子 | | ||
N-Channel junction field-Effect Transistors N-Channel Silicon Junction Field-Effect Transistors BF 245 A, B and C are N-channel junction field-effect transistors in plastic package similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in dc, AF and RF amplifiers. | SIEMENS 西门子 | | ||
IM-Channel Junction Field-Effect Transistors N-Channel Silicon Junction Field-Effect Transistors BF 245 A, B and C are N-channel junction field-effect transistors in plastic package similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in dc, AF and RF amplifiers. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-Channel Amplifiers N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. | FAIRCHILD 仙童半导体 | | ||
JFET VHF/UHF Amplifiers N-Channel - Depletion JFET VHF/UHF Amplifiers N–Channel — Depletion | ONSEMI 安森美半导体 | | ||
N-channel silicon field-effect transistors | ETC 知名厂家 | ETC | | |
Surface mount balun filter with a small size of 2.0 X 1.2 X 1.1 mm, RoHS compliant. 文件：200.12 Kbytes Page：2 Pages | FRONTIER | | ||
JFET PRO ELECTRON SERIES 文件：120.95 Kbytes Page：2 Pages | NSC 国半 | | ||
SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
n-channel JFET 文件：70.35 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
N-channel silicon field-effect transistors 文件：97.4 Kbytes Page：11 Pages | PHILIPS 飞利浦 | | ||
N-Channel Amplifiers 文件：24.68 Kbytes Page：3 Pages | FAIRCHILD 仙童半导体 | | ||
封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：卷带（TR） 描述：JFET N-CH 30V 6.5MA TO92 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：管件 描述：JFET N-CH 30V 6.5MA TO92 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
N-channel silicon field-effect transistors 文件：73.38 Kbytes Page：11 Pages | JMNIC 锦美电子 | | ||
N-channel silicon field-effect transistors 文件：73.38 Kbytes Page：11 Pages | JMNIC 锦美电子 | | ||
n-channel JFET 文件：70.35 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
n-channel JFET 文件：70.35 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
N-channel silicon field-effect transistors 文件：97.4 Kbytes Page：11 Pages | PHILIPS 飞利浦 | | ||
JFET PRO ELECTRON SERIES 文件：120.95 Kbytes Page：2 Pages | NSC 国半 | | ||
JFET PRO ELECTRON SERIES 文件：120.95 Kbytes Page：2 Pages | NSC 国半 | | ||
N-channel silicon field-effect transistors 文件：97.4 Kbytes Page：11 Pages | PHILIPS 飞利浦 | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available | POINN | | ||
Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B | NTE | | ||
VHF power MOS transistor 文件：91.6 Kbytes Page：12 Pages | PHILIPS 飞利浦 | |
BF245产品属性
- 类型
描述
- Maximum Power Dissipation：
350mW
- Maximum Gate Source Voltage：
30V
- Maximum Drain Source Voltage：
30V
- Maximum Drain Gate Voltage：
30V
- Maximum Continuous Drain Current：
100mA
- Configuration：
Single
- Channel Type：
N
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TERICOM |
24+/25+ |
1000 |
原装正品现货库存价优 |
||||
Fairchild(飞兆/仙童) |
26+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
恩XP |
2223+ |
26800 |
只做原装正品假一赔十为客户做到零风险 |
||||
恩XP |
26+ |
TO-92 |
15800 |
绝对原装现货,价格低,欢迎询购! |
|||
FAIRCHILD/仙童 |
26+ |
TO92 |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
FAIRCHILD |
24+ |
SMD |
20000 |
一级代理原装现货假一罚十 |
|||
仙童/NPX |
20+ |
明嘉莱只做原装正品现货 |
2510000 |
T092 |
|||
恩XP |
25+ |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
||||
FSC |
25+23+ |
TO92 |
18329 |
绝对原装正品全新进口深圳现货 |
|||
FSC |
25+ |
原厂原封 |
15000 |
全新原装现货,价格优势 |
BF245规格书下载地址
BF245参数引脚图相关
- c901
- C80
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- c20001
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- c188
- c1209
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- bul128a
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- BF247C
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- BF246C
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- BF246A
- BF246
- BF245C
- BF245B_D27Z
- BF245B,126
- BF245B,112
- BF245B AMO
- BF245B WAF
- BF245B
- BF245A1120
- BF245A112
- BF245A_Q
- BF245A_J35Z
- BF245A_D75Z_Q
- BF245A_D75Z
- BF245A_D27Z
- BF245A/D
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- BF245A/2
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- BF245A,126
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- BF245A
- BF244C_Q
- BF244C_J35Z
- BF244C
- BF244B_Q
- BF244B_J35Z
- BF244B
- BF244A_Q
- BF244A_J35Z
- BF244A_1
- BF244A
- BF24438-33B
- BF244
- BF241
- BF240-T/R
- BF240T/R
- BF240SD3GR2500
- BF240SD3BK2500-272
- BF240SD3BK1200
- BF240RL1
- BF240H
- BF240
- BF231M
- BF224
- BF215
- BF214
- BF2040W
- BF2040R
- BF2040
- BF2030W
- BF2030R
- BF2030
- BF200B
- BF2000W
- BF2000
- BF200
- BF199
BF245数据表相关新闻
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2020-6-9
DdatasheetPDF页码索引
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