N-Channel RF Amplifier

This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process 50.

N-Channel RF Amplifier

This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process 50.

JFET VHF/UHF Amplifiers N-Channel - Depletion

JFET VHF/UHF Amplifiers N–Channel — Depletion

PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS

N-Channel JFETs

JFET PRO ELECTRON SERIES

文件：120.95 Kbytes Page：2 Pages

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：托盘 描述：JFET N-CH 30V 50MA TO92 分立半导体产品 晶体管 - FET，MOSFET - 射频

JFET PRO ELECTRON SERIES

N-Channel RF Amplifier

N-Channel RF Amplifier

文件：79.58 Kbytes Page：6 Pages

N-Channel RF Amplifier

文件：79.58 Kbytes Page：6 Pages

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：托盘 描述：JFET N-CH 30V 50MA TO92 分立半导体产品 晶体管 - FET，MOSFET - 射频

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

Complementary Silicon Plastic Power Transistors

6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80–100 VOLTS 65 WATTS . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage —