N-Channel Amplifiers

N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50.

JFET VHF/UHF Amplifiers N-Channel - Depletion

JFET VHF/UHF Amplifiers N–Channel — Depletion

N-channel silicon field-effect transistors

IM-Channel Junction Field-Effect Transistors

N-Channel Silicon Junction Field-Effect Transistors BF 245 A, B and C are N-channel junction field-effect transistors in plastic package similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in dc, AF and RF amplifiers.

N-Channel junction field-Effect Transistors

N-Channel Silicon Junction Field-Effect Transistors BF 245 A, B and C are N-channel junction field-effect transistors in plastic package similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in dc, AF and RF amplifiers.

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：卷带（TR） 描述：JFET N-CH 30V 25MA TO92 分立半导体产品 晶体管 - FET，MOSFET - 射频

Trans JFET N-CH 30V 100mA 3-Pin TO-92

N-Channel junction field-Effect Transistors

JFET PRO ELECTRON SERIES

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N-channel silicon field-effect transistors

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JFET N-CH 30V 25MA TO92

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：卷带（TR） 描述：JFET N-CH 30V 25MA TO92 分立半导体产品 晶体管 - FET，MOSFET - 射频

N-channel silicon field-effect transistors

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NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

VHF power MOS transistor

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