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位置：首页 > IC中文资料第728页 > BC859B

BC859B价格

参考价格：￥0.0635

型号：BC859B,215 品牌：NXP 备注：这里有BC859B多少钱，2024年最近7天走势，今日出价，今日竞价，BC859B批发/采购报价，BC859B行情走势销售排行榜，BC859B报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BC859B

PNPSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC846,BC847, BC849,BC850(NPN)

SIEMENS

Siemens Ltd

SIEMENS
BC859B

SwitchingandAmplifierApplications

Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC859,BC860 •ComplementtoBC846...BC850

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BC859B

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagin

DiotecDIOTEC

德欧泰克

Diotec
BC859B

PNPSiliconAFTransistors

PNPSiliconAFTransistors •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC846,BC847,BC848,BC849,BC850(NPN)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BC859B

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BC849andBC850. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoiseinputstagesofaudiofrequencyequipment.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BC859B

GeneralPurposeTransistorPNPSilicon

GeneralPurposeTransistor PNPSilicon P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON
BC859B

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BC849andBC850. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoiseinputstagesofaudiofrequencyequipment.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BC859B

PNPGeneralPurposeTransistor

■Features ●Lowcurrent(max.100mA) ●Lowvoltage(max.45V). ●NPNcomplements:BC849andBC850.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
BC859B

GeneralPurposeTransistors

GeneralPurposeTransistors PNPSilicon •MoistureSensitivityLevel:1 •ESDRating –HumanBodyModel:>4000V –MachineModel:>400V •Wedeclarethatthematerialofproductcompliancewith RoHSrequirements.

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

YEASHIN
BC859B

PNPgeneralpurposetransistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BC859B

PNPTransistors

文件：540.59 Kbytes Page：4 Pages

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
BC859B

SMDGeneralPurposePNPTransistors

文件：145.27 Kbytes Page：2 Pages

DiotecDIOTEC

德欧泰克

Diotec
BC859B-4B

SOT23PNPSILICONPLANARGENERALPURPOSETRANSISTORS

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
BC859BF

PNPSiliconAFTransistor

PNPSiliconAFTransistor •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC847BF,BC848BFBC849BF,BC850BF(NPN)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BC859BL

GENERALPURPOSETRANSISTORSPNPSILICON

DESCRIPTION The BC856857858859ALBL/CLareavailablein SOT23package FEATURES ⚫MoistureSensitivityLevel:1 ⚫ESDRatingHumanBodyModel:>4000V MachineModel:>400 V ⚫AvailableinSOT23package

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI
BC859BLT1

GeneralPurposeTransistors

GeneralPurposeTransistors PNPSilicon Features •Pb−FreePackagesareAvailable

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BC859BLT1G

GeneralPurposeTransistorsPNPSilicon

GeneralPurposeTransistors PNPSilicon Features •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BC859BLT1G

GeneralPurposeTransistors

GeneralPurposeTransistors PNPSilicon •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V –MachineModel:>400V •Wedeclarethatthematerialofproductcompliancewith RoHSrequirements.

FS

First Silicon Co., Ltd

FS
BC859BLT3

GeneralPurposeTransistors

GeneralPurposeTransistors PNPSilicon Features •Pb−FreePackagesareAvailable

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BC859BLT3G

GeneralPurposeTransistorsPNPSilicon

GeneralPurposeTransistors PNPSilicon Features •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BC859BMTF

PNPEpitaxialSiliconTransistor

Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC859,BC860 •ComplementtoBC846...BC850

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BC859BW

PNPSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC847W,BC848W,BC849W,BC850W(NPN)

SIEMENS

Siemens Ltd

SIEMENS
BC859BW

PNPgeneralpurposetransistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BC859BW

SMDGeneralPurposePNPTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

Diotec
BC859BW

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinaSOT323plasticpackage. NPNcomplements:BC849WandBC850W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BC859BW

PNPSiliconAFTransistors

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC846W,BC847W,BC848W,BC849W,BC850W(NPN)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BC859BW

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

Diotec
BC859BW

PNPGeneralPurposeTransistor

■Features ●Lowcurrent(max.100mA) ●Lowvoltage(max.45V). ●ComplementstoBC849WandBC850W.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
BC859BW

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinaSOT323plasticpackage. NPNcomplements:BC849WandBC850W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BC859BLT1

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PNP 30V 0.1A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BC859BLT1G

GeneralPurposeTransistors

文件：154.41 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BC859BLT1G

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PNP 30V 0.1A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BC859BLT3G

GeneralPurposeTransistors

文件：154.41 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BC859BW

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors

文件：98.64 Kbytes Page：2 Pages

DiotecDIOTEC

德欧泰克

Diotec
859

1.3WattsAxialLeadedZenerDiodes

VOLTAGERANGE:2.4-200VPOWER:1.3Watts Features ●CompleteVoltageRange2.4to200Volts ●Highpeakreversepowerdissipation ●Highreliability ●Lowleakagecurrent

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
ADG859

1.3ohmCMOS,1.8Vto5.5VSingleSPDTSwitch/2:1MUXinSOT-66Package

GENERALDESCRIPTION TheADG859isamonolithic,CMOSSPDT(singlepole,doublethrow)switchthatoperateswithasupplyrangeof1.8Vto5.5V.Itisdesignedtoofferlowonresistanceof2.3Ωmaximumovertheentiretemperaturerangeof−40°Cto+125°C.TheADG859alsohasthecapabilityof

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADG859BRYZ-REEL

1.3ohmCMOS,1.8Vto5.5VSingleSPDTSwitch/2:1MUXinSOT-66Package

GENERALDESCRIPTION TheADG859isamonolithic,CMOSSPDT(singlepole,doublethrow)switchthatoperateswithasupplyrangeof1.8Vto5.5V.Itisdesignedtoofferlowonresistanceof2.3Ωmaximumovertheentiretemperaturerangeof−40°Cto+125°C.TheADG859alsohasthecapabilityof

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
A-859

Avikrimp??SnapPlug,for18-22AWGWire,Box,24.31mm(.957)Length

文件：126.58 Kbytes Page：2 Pages

MOLEX4Molex Electronics Ltd.

莫仕公司MOLEX莫仕公司

MOLEX4
A-859T

Avikrimp??SnapPlug,for18-22AWGWire,MylarTape,24.31mm(.957)Length

文件：126.26 Kbytes Page：2 Pages

MOLEX4Molex Electronics Ltd.

莫仕公司MOLEX莫仕公司

MOLEX4

BC859B产品属性

  • 类型

    描述

  • 型号

    BC859B

  • 制造商

    PanJit Touch Screens

BC859B供应商更多...

更新时间：2024-5-2 3:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市蓝山航业科技有限公司
BC859BE6327
sie
22+
500000
行业低价,代理渠道
询价
深圳市高捷芯城科技有限公司
BC859BW,115
Nexperia(安世)
23+
SOT-323(SC-70)
3022
原厂订货渠道,支持BOM配单一站式服务
询价
深圳市得捷芯城科技有限公司
BC859BW
NXP/恩智浦
23+
NA/
12000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市凌旭科技有限公司
BC859B
INFINEON
2016+
SOT-323
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市纳艾斯科技有限公司
BC859B
NXP
2020+
SOT-23
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市科芯源微电子有限公司
BC859B
NEXPERIA/安世
23+
SOT-23
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
深圳市品优时代科技有限公司
BC859B
NXP/恩智浦
2021/2022+
NA
6000
原厂原装现货订货价格优势终端BOM表可配单提供样品
询价
瀚佳科技(深圳)有限公司
BC859BE6327
INFINEON
2020+
SOT-323
18800
绝对原装进口现货,假一赔十,价格优势!
询价
深圳市弘扬芯城科技有限公司
BC859BW,115
Nexperia(安世)
23+
SOT323
6000
询价
深圳市航润创能电子集团有限公司
BC859B
Nexperia
21+
SOT23
3000
原装现货假一赔十
询价

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