Switching and Amplifier Applications

Features • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC859, BC860 • Complement to BC846 BC850

PNP general purpose transistors

DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC849 and BC850. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise input stages of audio frequency equipment.

丝印代码：4BS；PNP Silicon AF Transistors

PNP Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC846, BC847, BC848, BC849, BC850 (NPN)

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packagin

General Purpose Transistor PNP Silicon

General Purpose Transistor PNP Silicon P/b Lead(Pb)-Free

PNP general purpose transistors

PNP General Purpose Transistor

■ Features ● Low current (max. 100 mA) ● Low voltage (max. 45 V). ● NPN complements: BC849 and BC850.

PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

Features ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN)

丝印代码：4B；PNP general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 45 V).

General Purpose Transistors

General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

Transistors

Bipolar Transistors

通用型双极晶体管

丝印代码：4B；PNP Transistors

文件：540.59 Kbytes Page：4 Pages

SMD General Purpose PNP Transistors

文件：145.27 Kbytes Page：2 Pages

SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS

PNP Silicon AF Transistor

PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC847BF, BC848BF BC849BF, BC850BF (NPN)

GENERAL PURPOSE TRANSISTORS PNP SILICON

DESCRIPTION The BC856 857 858 859 A L BL/ CL are available in SOT 23 p ackage FEATURES ⚫ Moisture Sensitivity Level: 1 ⚫ ESD Rating Human Body Model: >4000 V Machine Model: >400 V ⚫ Availabl e in SOT 23 p ackage

General Purpose Transistors

General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available

General Purpose Transistors PNP Silicon

General Purpose Transistors PNP Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

丝印代码：3B；General Purpose Transistors

General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

General Purpose Transistors

General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available

General Purpose Transistors PNP Silicon

General Purpose Transistors PNP Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

丝印代码：9DB；PNP Epitaxial Silicon Transistor

Features • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC859, BC860 • Complement to BC846 BC850

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 200 mW • Plastic case SOT-323 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP Silicon AF Transistors

• For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC846W, BC847W, BC848W, BC849W, BC850W (NPN)

PNP general purpose transistors

DESCRIPTION PNP transistor in a SOT323 plastic package. NPN complements: BC849W and BC850W. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.

丝印代码：4B；PNP general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 45 V).

PNP General Purpose Transistor

■ Features ● Low current (max. 100 mA) ● Low voltage (max. 45 V). ● Complements to BC849W and BC850W.

PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

Features ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Complementary types: BC 847W, BC 848W, BC 849W, BC 850W (NPN)

PNP general purpose transistors

SMD General Purpose PNP Transistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 200 mW • Plastic case SOT-323 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PNP 30V 0.1A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PNP 30V 0.1A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

General Purpose Transistors

文件：154.41 Kbytes Page：7 Pages

General Purpose Transistors

文件：154.41 Kbytes Page：7 Pages

Surface Mount General Purpose Si-Epi-Planar Transistors

文件：98.64 Kbytes Page：2 Pages

PNP general purpose transistors

DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC849 and BC850. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise input stages of audio frequency equipment.

PNP general purpose transistors

DESCRIPTION PNP transistor in a SOT323 plastic package. NPN complements: BC849W and BC850W. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.

Integrated Circuit Quad, Low Noise, JFET Input Operational Amplifier

Description: The NTE859 (14–Lead DIP) and NTE859SM (SOIC–14 Surface Mount) JFET–input operational amplifiers are low noise amplifiers with low noise input bias, offset currents, and fast slew rate. The low harmonic distortion and low noise make these devices ideally suited as amplifiers for high–

NPN SILICON RF POWER TRANSISTOR

文件：155.82 Kbytes Page：6 Pages

NPN SILICON RF POWER TRANSISTOR

文件：155.82 Kbytes Page：6 Pages