BC859C价格

参考价格:¥0.0635

型号:BC859C,215 品牌:NXP 备注:这里有BC859C多少钱,2024年最近7天走势,今日出价,今日竞价,BC859C批发/采购报价,BC859C行情走势销售排行榜,BC859C报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BC859C

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BC849andBC850. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoiseinputstagesofaudiofrequencyequipment.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BC859C

PNPSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC846,BC847, BC849,BC850(NPN)

SIEMENS

Siemens Ltd

SIEMENS
BC859C

SwitchingandAmplifierApplications

Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC859,BC860 •ComplementtoBC846...BC850

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BC859C

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagin

DiotecDIOTEC

德欧泰克

Diotec
BC859C

PNPSiliconAFTransistors

PNPSiliconAFTransistors •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC846,BC847,BC848,BC849,BC850(NPN)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BC859C

GeneralPurposeTransistorPNPSilicon

GeneralPurposeTransistor PNPSilicon P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON
BC859C

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BC849andBC850. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoiseinputstagesofaudiofrequencyequipment.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BC859C

PNPGeneralPurposeTransistor

■Features ●Lowcurrent(max.100mA) ●Lowvoltage(max.45V). ●NPNcomplements:BC849andBC850.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
BC859C

GeneralPurposeTransistors

GeneralPurposeTransistors PNPSilicon •MoistureSensitivityLevel:1 •ESDRating –HumanBodyModel:>4000V –MachineModel:>400V •Wedeclarethatthematerialofproductcompliancewith RoHSrequirements.

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

YEASHIN
BC859C

PNPSiliconAFTransistor

PNPSiliconAFTransistor •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30hzand15kHz •Complementarytypes: BC847...-BC850...(NPN) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BC859C

PNPgeneralpurposetransistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BC859C

SMDGeneralPurposePNPTransistors

文件:145.27 Kbytes Page:2 Pages

DiotecDIOTEC

德欧泰克

Diotec
BC859C

PNPTransistors

文件:540.59 Kbytes Page:4 Pages

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
BC859C

PNPSiliconAFTransistor

文件:887.44 Kbytes Page:14 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

GENERALPURPOSETRANSISTORSPNPSILICON

DESCRIPTION The BC856857858859ALBL/CLareavailablein SOT23package FEATURES ⚫MoistureSensitivityLevel:1 ⚫ESDRatingHumanBodyModel:>4000V MachineModel:>400 V ⚫AvailableinSOT23package

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI

GeneralPurposeTransistors

GeneralPurposeTransistors PNPSilicon Features •Pb−FreePackagesareAvailable

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistors

GeneralPurposeTransistors PNPSilicon •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V –MachineModel:>400V •Wedeclarethatthematerialofproductcompliancewith RoHSrequirements.

FS

First Silicon Co., Ltd

FS

GeneralPurposeTransistorsPNPSilicon

GeneralPurposeTransistors PNPSilicon Features •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistors

GeneralPurposeTransistors PNPSilicon Features •Pb−FreePackagesareAvailable

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistorsPNPSilicon

GeneralPurposeTransistors PNPSilicon Features •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistors

GeneralPurposeTransistors PNPSilicon •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V –MachineModel:>400V •Wedeclarethatthematerialofproductcompliancewith RoHSrequirements.

FS

First Silicon Co., Ltd

FS

PNPEpitaxialSiliconTransistor

Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC859,BC860 •ComplementtoBC846...BC850

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

PNPgeneralpurposetransistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

SMDGeneralPurposePNPTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

Diotec

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinaSOT323plasticpackage. NPNcomplements:BC849WandBC850W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinaSOT323plasticpackage. NPNcomplements:BC849WandBC850W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

PNPGeneralPurposeTransistor

■Features ●Lowcurrent(max.100mA) ●Lowvoltage(max.45V). ●ComplementstoBC849WandBC850W.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

Diotec

PNPSiliconAFTransistors

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC846W,BC847W,BC848W,BC849W,BC850W(NPN)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

PNPSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC847W,BC848W,BC849W,BC850W(NPN)

SIEMENS

Siemens Ltd

SIEMENS

SOT23PNPSILICONPLANARGENERALPURPOSETRANSISTORS

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 30V 0.1A TO236AB 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 30V 0.1A SOT23 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

GeneralPurposeTransistors

文件:154.41 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistors

文件:154.41 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1.3WattsAxialLeadedZenerDiodes

VOLTAGERANGE:2.4-200VPOWER:1.3Watts Features ●CompleteVoltageRange2.4to200Volts ●Highpeakreversepowerdissipation ●Highreliability ●Lowleakagecurrent

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

1.3ohmCMOS,1.8Vto5.5VSingleSPDTSwitch/2:1MUXinSOT-66Package

GENERALDESCRIPTION TheADG859isamonolithic,CMOSSPDT(singlepole,doublethrow)switchthatoperateswithasupplyrangeof1.8Vto5.5V.Itisdesignedtoofferlowonresistanceof2.3Ωmaximumovertheentiretemperaturerangeof−40°Cto+125°C.TheADG859alsohasthecapabilityof

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

1.3ohmCMOS,1.8Vto5.5VSingleSPDTSwitch/2:1MUXinSOT-66Package

GENERALDESCRIPTION TheADG859isamonolithic,CMOSSPDT(singlepole,doublethrow)switchthatoperateswithasupplyrangeof1.8Vto5.5V.Itisdesignedtoofferlowonresistanceof2.3Ωmaximumovertheentiretemperaturerangeof−40°Cto+125°C.TheADG859alsohasthecapabilityof

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

Avikrimp??SnapPlug,for18-22AWGWire,Box,24.31mm(.957)Length

文件:126.58 Kbytes Page:2 Pages

MOLEX4Molex Electronics Ltd.

莫仕公司MOLEX莫仕公司

MOLEX4

Avikrimp??SnapPlug,for18-22AWGWire,MylarTape,24.31mm(.957)Length

文件:126.26 Kbytes Page:2 Pages

MOLEX4Molex Electronics Ltd.

莫仕公司MOLEX莫仕公司

MOLEX4

BC859C产品属性

  • 类型

    描述

  • 型号

    BC859C

  • 功能描述

    两极晶体管 - BJT SOT-23 PNP GP AMP

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-4-23 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NXP
2020+
SOT23
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
NEXPERIA
1444
SOT223
2300
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON/英飞凌
23+
SOT-23
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
INF
2020+
SOT23
120000
100%进口原装正品公司现货库存
NXP/恩智浦
2021/2022+
NA
6000
原厂原装现货订货价格优势终端BOM表可配单提供样品
Infineon/英飞凌
21+
SOT23-3
8800
公司只作原装正品
NXP
23+
NA
3000
专业电子元器件供应链正迈科技特价代理QQ1304306553
FAIRCHILD
1844+
NA
9852
只做原装正品假一赔十为客户做到零风险!!
NXP/恩智浦
21+
SOT-323
600000
航宇科工半导体-中国航天科工集团战略合作伙伴!
NXP
21+
SOT323
1488
绝对有现货,不止网上数量!原装正品,假一赔十!

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