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BC859C价格
参考价格:¥0.0635
型号:BC859C,215 品牌:NXP 备注:这里有BC859C多少钱,2025年最近7天走势,今日出价,今日竞价,BC859C批发/采购报价,BC859C行情走势销售排行榜,BC859C报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BC859C | PNP general purpose transistors DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC849 and BC850. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise input stages of audio frequency equipment. | Philips 飞利浦 | ||
BC859C | PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) Features ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) | SIEMENS 西门子 | ||
BC859C | Switching and Amplifier Applications Features • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC859, BC860 • Complement to BC846 ... BC850 | Fairchild 仙童半导体 | ||
BC859C | Surface mount Si-Epitaxial PlanarTransistors Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packagin | Diotec 德欧泰克 | ||
BC859C | PNP Silicon AF Transistors PNP Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC846, BC847, BC848, BC849, BC850 (NPN) | Infineon 英飞凌 | ||
BC859C | General Purpose Transistor PNP Silicon General Purpose Transistor PNP Silicon P/b Lead(Pb)-Free | WEITRON | ||
BC859C | PNP general purpose transistors | ETC 知名厂家 | ETC | |
BC859C | PNP General Purpose Transistor ■ Features ● Low current (max. 100 mA) ● Low voltage (max. 45 V). ● NPN complements: BC849 and BC850. | KEXIN 科信电子 | ||
BC859C | General Purpose Transistors General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements. | YEASHIN 亚昕科技 | ||
BC859C | PNP Silicon AF Transistor PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC847...-BC850... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q1011) | Infineon 英飞凌 | ||
BC859C | PNP general purpose transistors FEATURES •Low current (max. 100 mA) •Low voltage (max. 45 V). | NEXPERIA 安世 | ||
BC859C | PNP Transistors 文件:540.59 Kbytes Page:4 Pages | YFWDIODE 佑风微 | ||
BC859C | Bipolar Transistors | Diotec 德欧泰克 | ||
BC859C | 通用型双极晶体管 | PANJIT 強茂 | ||
BC859C | PNP general purpose transistors | NEXPERIA 安世 | ||
BC859C | SMD General Purpose PNP Transistors 文件:145.27 Kbytes Page:2 Pages | Diotec 德欧泰克 | ||
BC859C | PNP Silicon AF Transistor 文件:887.44 Kbytes Page:14 Pages | Infineon 英飞凌 | ||
GENERAL PURPOSE TRANSISTORS PNP SILICON DESCRIPTION The BC856 857 858 859 A L BL/ CL are available in SOT 23 p ackage FEATURES ⚫ Moisture Sensitivity Level: 1 ⚫ ESD Rating Human Body Model: >4000 V Machine Model: >400 V ⚫ Availabl e in SOT 23 p ackage | AITSEMI 创瑞科技 | |||
General Purpose Transistors General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | |||
General Purpose Transistors PNP Silicon General Purpose Transistors PNP Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | |||
General Purpose Transistors General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements. | FS | |||
General Purpose Transistors General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | |||
General Purpose Transistors General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements. | FS | |||
General Purpose Transistors PNP Silicon General Purpose Transistors PNP Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | |||
PNP Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC859, BC860 • Complement to BC846 ... BC850 | Fairchild 仙童半导体 | |||
SMD General Purpose PNP Transistors Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 200 mW • Plastic case SOT-323 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled | Diotec 德欧泰克 | |||
PNP general purpose transistors DESCRIPTION PNP transistor in a SOT323 plastic package. NPN complements: BC849W and BC850W. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. | Philips 飞利浦 | |||
PNP general purpose transistors | ETC 知名厂家 | ETC | ||
PNP General Purpose Transistor ■ Features ● Low current (max. 100 mA) ● Low voltage (max. 45 V). ● Complements to BC849W and BC850W. | KEXIN 科信电子 | |||
Surface mount Si-Epitaxial PlanarTransistors Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 200 mW • Plastic case SOT-323 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled | Diotec 德欧泰克 | |||
PNP Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC846W, BC847W, BC848W, BC849W, BC850W (NPN) | Infineon 英飞凌 | |||
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) Features ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Complementary types: BC 847W, BC 848W, BC 849W, BC 850W (NPN) | SIEMENS 西门子 | |||
PNP general purpose transistors FEATURES •Low current (max. 100 mA) •Low voltage (max. 45 V). | NEXPERIA 安世 | |||
SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS
| ETCList of Unclassifed Manufacturers 未分类制造商 | |||
封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 30V 0.1A TO236AB 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | ||
封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 30V 0.1A SOT23 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | Infineon 英飞凌 | |||
General Purpose Transistors 文件:154.41 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
General Purpose Transistors 文件:154.41 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
1.3 Watts Axial Leaded Zener Diodes VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current | SUNMATE 森美特 | |||
1.3ohm CMOS, 1.8 V to 5.5 V Single SPDT Switch/2:1 MUX in SOT-66 Package GENERAL DESCRIPTION The ADG859 is a monolithic, CMOS SPDT (single pole, double throw) switch that operates with a supply range of 1.8 V to 5.5 V. It is designed to offer low on resistance of 2.3 Ω maximum over the entire temperature range of −40°C to +125°C. The ADG859 also has the capability of | AD 亚德诺 | |||
1.3ohm CMOS, 1.8 V to 5.5 V Single SPDT Switch/2:1 MUX in SOT-66 Package GENERAL DESCRIPTION The ADG859 is a monolithic, CMOS SPDT (single pole, double throw) switch that operates with a supply range of 1.8 V to 5.5 V. It is designed to offer low on resistance of 2.3 Ω maximum over the entire temperature range of −40°C to +125°C. The ADG859 also has the capability of | AD 亚德诺 | |||
Avikrimp??Snap Plug, for 18-22 AWG Wire, Box, 24.31mm (.957) Length 文件:126.58 Kbytes Page:2 Pages | Molex 莫仕 | |||
Avikrimp??Snap Plug, for 18-22 AWG Wire, Mylar Tape, 24.31mm (.957) Length 文件:126.26 Kbytes Page:2 Pages | Molex 莫仕 |
BC859C产品属性
- 类型
描述
- 型号
BC859C
- 功能描述
两极晶体管 - BJT SOT-23 PNP GP AMP
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Nexperia(安世) |
24+ |
SOT-23(TO-236) |
7957 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
恩XP |
24+ |
NA/ |
6250 |
原装现货,当天可交货,原型号开票 |
|||
恩XP |
24+ |
SOT23 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON/英飞凌 |
23+ |
SOT-23 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
INFINEON/英飞凌 |
24+ |
SOT323 |
159686 |
明嘉莱只做原装正品现货 |
|||
CJ |
2450+ |
SOT23 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
Infineon/英飞凌 |
23+ |
SOT23-3 |
12700 |
买原装认准中赛美 |
|||
NEXPERIA/安世 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
ROHM |
23+ |
NA |
6556 |
专做原装正品,假一罚百! |
|||
恩XP |
24+ |
N/A |
6000 |
原厂原装,价格优势,欢迎洽谈! |
BC859C芯片相关品牌
BC859C规格书下载地址
BC859C参数引脚图相关
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- BC858BWH6327XTSA1
- BC858BWH6327
- BC858BW
- BC858BT116
- BC858BQ
- BC858BMTF
- BC858BF
- BC858B
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