PNP Silicon AF Transistors

• For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC846W, BC847W, BC848W, BC849W, BC850W (NPN)

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 200 mW • Plastic case SOT-323 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP general purpose transistors

DESCRIPTION PNP transistor in a SOT323 plastic package. NPN complements: BC849W and BC850W. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.

PNP GENERAL PURPOSE TRANSISTORS

VOLTAGE 30/45/65 Volts CURRENT 200 mWatts FEATURES • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current IC = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/ BC849W Series • In compliance with EU RoHS 2002/95/EC directives

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for general purpose and switching applications

丝印代码：4D；PNP general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 45 V).

PNP general purpose transistors

PNP General Purpose Transistor

■ Features ● Low current (max. 100 mA) ● Low voltage (max. 45 V). ● Complements to BC849W and BC850W.

PNP Transistors

文件：987.34 Kbytes Page：3 Pages

PNP小信号三极管

Surface Mount General Purpose Si-Epi-Planar Transistors

文件：99.08 Kbytes Page：2 Pages

PNP general purpose transistors

文件：140.78 Kbytes Page：7 Pages

PNP Transistors

文件：987.34 Kbytes Page：3 Pages

PNP general purpose transistors

DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC849 and BC850. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise input stages of audio frequency equipment.

Integrated Circuit Quad, Low Noise, JFET Input Operational Amplifier

Description: The NTE859 (14–Lead DIP) and NTE859SM (SOIC–14 Surface Mount) JFET–input operational amplifiers are low noise amplifiers with low noise input bias, offset currents, and fast slew rate. The low harmonic distortion and low noise make these devices ideally suited as amplifiers for high–

NPN SILICON RF POWER TRANSISTOR

文件：155.82 Kbytes Page：6 Pages

NPN SILICON RF POWER TRANSISTOR

文件：155.82 Kbytes Page：6 Pages