80 V, 500 mA NPN general-purpose transistors

Features and benefits • High current • High voltage • Two current gain selections • AEC-Q101 qualified

80 V, 500 mA NPN general-purpose transistors

Features and benefits • High current • High voltage • Two current gain selections • AEC-Q101 qualified

80 V, 500 mA NPN general-purpose transistors

Features and benefits • High current • High voltage • Two current gain selections • AEC-Q101 qualified

80 V, 500 mA NPN general-purpose transistors

Features and benefits • High current • High voltage • Two current gain selections • High-temperature applications up to 175 °C • AEC-Q101 qualified

80 V, 500 mA NPN general-purpose transistors

Features and benefits • High current • High voltage • Two current gain selections • AEC-Q101 qualified

80 V, 500 mA NPN general-purpose transistors

Features and benefits • High current • High voltage • Two current gain selections • AEC-Q101 qualified

80 V, 500 mA NPN general-purpose transistors

Features and benefits • High current • High voltage • Two current gain selections • High-temperature applications up to 175 °C • AEC-Q101 qualified

80 V, 500 mA NPN general-purpose transistors

Features and benefits • High current • High voltage • Two current gain selections • AEC-Q101 qualified

80 V, 500 mA NPN general-purpose transistors

Features and benefits • High current • High voltage • Two current gain selections • High-temperature applications up to 175 °C • AEC-Q101 qualified

80 V, 500 mA NPN general-purpose transistors

Features and benefits • High current • High voltage • Two current gain selections • High-temperature applications up to 175 °C • AEC-Q101 qualified

80 V, 500 mA NPN general-purpose transistors

Features and benefits • High current • High voltage • Two current gain selections • AEC-Q101 qualified

80 V, 500 mA NPN general-purpose transistors

Features and benefits • High current • High voltage • Two current gain selections • AEC-Q101 qualified

NPN general purpose transistor

DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complement: BC807. FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features mW Power Dissipation Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary PNP Types Available (BC807)

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

PARTMARKING DETAILS BC81716 – 6AZ BC81725 – 6BZ BC81740 – 6CZ COMPLEMENTARY TYPE – BC807

NPN Silicon AF Transistors

● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 807, BC 808 (PNP)

NPN EPITAXIAL SILICON TRANSISTOR

Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/ BC808

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features ● Ideally Suited for Automatic Insertion ● Epitaxial Planar Die Construction ● For Switching, AF Driver and Amplifier Applications ● Complementary PNP Types Available (BC807)

Small Signal Transistors (NPN)

FEATURES ♦ NPN Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications. ♦ Especially suited for automatic insertion in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16, -25 and -40 according to their current gain. ♦ As com

EPITAXAIL PLANAR NPN TRANSISTOR(for General Purpose, Switching)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Complementary to BC807.

NPN Silicon Transistor (High current application Switching application)

Descriptions • High current application • Switching application Features • Suitable for AF-Driver stage and low power output stages • Complementary pair with BC807

NPN Silicon AF Transistors

● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807, BC808 (PNP)

Surface mount Si-Epitaxial PlanarTransistors

• Power dissipation 310 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

NPN GENERAL PURPOSE TRANSISTORS

VOLTAGE 45 Volts POWER 225 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 500mA • Pb free product are available : 99 Sn above can meet RoHS environment substance directive request

NPN Silicon AF Transistors

Features ● For general AF applications. ● High collector current. ● High current gain. ● Low collector-emitter saturation voltage.

45 V, 500 mA NPN general-purpose transistors

NPN Silicon Epitaxial Planar Transistors

NPN Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier application, These transistors are subdivided into three groups –16, -25, -40 according to their current gain. As complementary types, the PNP transistors BC807 and BC808 are recommended.

TRANSISTOR (NPN)

FEATURES ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807 (PNP)

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in drive and output stages of audio amplifiers.

High current application

Descriptions • High current application • Switching application Features • Suitable for AF-Driver stage and low power output stages • Complementary pair with BC807

Plastic-Encapsulate Transistors

BC817-16(NPN) BC817-25(NPN) BC817-40(NPN) FEATURES ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807 (PNP)

Surface mount switching diode

Features • For general AF application. • Complementary PNP type available BC807. • High collector current, high current gain. • Low collector-emitter saturation voltage. • RoHS compliant package Applications • General purpose medium power amplifier. • Switching requiring collector currents

NPN Silicon AF Transistors

Features ● For general AF applications. ● High collector current. ● High current gain. ● Low collector-emitter saturation voltage.

SURFACE MOUNT SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR BC817 and BC818 series devices are silicon NPN transistors, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications.

NPN Silicon Epitaxial Planar Transistors

NPN Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier application, These transistors are subdivided into three groups –16, -25, -40 according to their current gain. As complementary types, the PNP transistors BC807 and BC808 are recommended.

NPN Transistors

● SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808

SILICON PLANAR EPITAXIAL TRANSISTORS

SOT-23 Formed SMD Package SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors

NPN Plastic Encapsulate Transistors

FEATURES • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807 (PNP)

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) Features ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807 (PNP)

Collector Base Voltage

For switching, AF driver and amplifier applications These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the PNP transistors BC807 and BC808 are recommended.

NPN General Purpose Amplifier

FEATURES ● For general AF application. ● Complementary PNP type available BC807. ● High collector current, high current gain. ● Low collector-emitter saturation voltage.

45 V, 500 mA NPN general-purpose transistors

Features and benefits • High current • Three current gain selections

45 V, 500 mA NPN general-purpose transistors

General description NPN general-purpose transistors in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits • High current • Three current gain selections • AEC-Q101 qualified Applications • General-purpose switching and amplification

TRANSISTO R (NPN)

Features For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP)

SOT-23 Plastic-Encapsulate Transistors

FEATURES * For general AF applications * High collector current * High current gain * Low collector-emitter saturation voltage * Complementary types: BC807 (PNP)

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features ● Ideally Suited for Automatic Insertion ● Epitaxial Planar Die Construction ● For Switching, AF Driver and Amplifier Applications ● Complementary PNP Types Available (BC807)

SMALL SIGNAL NPN TRANSISTORS

SMALL SIGNAL NPN TRANSISTORS ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS ■ MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS ■ TAPE AND REEL PACKING ■ THE PNP COMPLEMENTARY TYPES ARE BC807-25 AND BC817-40 RESPECTIVELY APPLICATIONS ■ WELL SUITABLE FOR PORTABLE EQUIPMENT ■ SMALL L

45 V, 500 mA NPN general-purpose transistors

Features and benefits • High current • Three current gain selections

NPN GENERAL PURPOSE TRANSISTORS

FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

PARTMARKING DETAILS BC81716 – 6AZ BC81725 – 6BZ BC81740 – 6CZ COMPLEMENTARY TYPE – BC807

NPN general purpose transistor

DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complement: BC807. FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features mW Power Dissipation Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary PNP Types Available (BC807)

NPN Silicon AF Transistors

● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 807, BC 808 (PNP)

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features ● Ideally Suited for Automatic Insertion ● Epitaxial Planar Die Construction ● For Switching, AF Driver and Amplifier Applications ● Complementary PNP Types Available (BC807)

EPITAXAIL PLANAR NPN TRANSISTOR(for General Purpose, Switching)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Complementary to BC807.

NPN Small Signal Transistor 310mW

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Ideally Suited for Automatic Insertion •

NPN Silicon AF Transistors

● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807, BC808 (PNP)

Surface mount Si-Epitaxial PlanarTransistors

Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Switching, Amplification Commercial grade Suffix -Q: AEC-Q101 compliant 1) Suffix -AQ: in AEC-Q101 qualification 1) Mechanical Data 1) Taped an

Surface mount Si-Epitaxial PlanarTransistors

• Power dissipation 310 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled