丝印代码：BC817；P/N suffix V means AEC-Q101 qualified, e.g :BC817V P/N suffix V means Halogen-free

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EPITAXAIL PLANAR NPN TRANSISTOR(for General Purpose, Switching)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Complementary to BC807.

NPN Silicon Transistor (High current application Switching application)

Descriptions • High current application • Switching application Features • Suitable for AF-Driver stage and low power output stages • Complementary pair with BC807

SILICON PLANAR EPITAXIAL TRANSISTORS

SOT-23 Formed SMD Package SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors

SURFACE MOUNT SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR BC817 and BC818 series devices are silicon NPN transistors, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications.

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features ● Ideally Suited for Automatic Insertion ● Epitaxial Planar Die Construction ● For Switching, AF Driver and Amplifier Applications ● Complementary PNP Types Available (BC807)

High current application

Descriptions • High current application • Switching application Features • Suitable for AF-Driver stage and low power output stages • Complementary pair with BC807

Surface mount Si-Epitaxial PlanarTransistors

• Power dissipation 310 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

PARTMARKING DETAILS BC81716 – 6AZ BC81725 – 6BZ BC81740 – 6CZ COMPLEMENTARY TYPE – BC807

NPN EPITAXIAL SILICON TRANSISTOR

Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/ BC808

丝印代码：6D*；NPN general purpose transistor

DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complement: BC807. FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

NPN Silicon AF Transistors

● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807, BC808 (PNP)

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

丝印代码：6D*；45 V, 500 mA NPN general-purpose transistors

NPN General Purpose Amplifier

FEATURES ● For general AF application. ● Complementary PNP type available BC807. ● High collector current, high current gain. ● Low collector-emitter saturation voltage.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in drive and output stages of audio amplifiers.

Small Signal Transistors (NPN)

FEATURES ♦ NPN Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications. ♦ Especially suited for automatic insertion in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16, -25 and -40 according to their current gain. ♦ As com

TRANSISTOR (NPN)

FEATURES ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807 (PNP)

NPN Silicon AF Transistors

Features ● For general AF applications. ● High collector current. ● High current gain. ● Low collector-emitter saturation voltage.

NPN GENERAL PURPOSE TRANSISTORS

VOLTAGE 45 Volts POWER 225 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 500mA • Pb free product are available : 99 Sn above can meet RoHS environment substance directive request

NPN Plastic Encapsulate Transistors

FEATURES • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807 (PNP)

NPN Silicon Epitaxial Planar Transistors

NPN Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier application, These transistors are subdivided into three groups –16, -25, -40 according to their current gain. As complementary types, the PNP transistors BC807 and BC808 are recommended.

NPN Silicon AF Transistors

● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 807, BC 808 (PNP)

TRANSISTO R (NPN)

Features For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP)

NPN Silicon AF Transistors

Features ● For general AF applications. ● High collector current. ● High current gain. ● Low collector-emitter saturation voltage.

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features mW Power Dissipation Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary PNP Types Available (BC807)

SMALL SIGNAL NPN TRANSISTORS

SMALL SIGNAL NPN TRANSISTORS ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS ■ MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS ■ TAPE AND REEL PACKING ■ THE PNP COMPLEMENTARY TYPES ARE BC807-25 AND BC817-40 RESPECTIVELY APPLICATIONS ■ WELL SUITABLE FOR PORTABLE EQUIPMENT ■ SMALL L

NPN Silicon Epitaxial Planar Transistors

NPN Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier application, These transistors are subdivided into three groups –16, -25, -40 according to their current gain. As complementary types, the PNP transistors BC807 and BC808 are recommended.

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features ● Ideally Suited for Automatic Insertion ● Epitaxial Planar Die Construction ● For Switching, AF Driver and Amplifier Applications ● Complementary PNP Types Available (BC807)

NPN Transistors

● SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808

Collector Base Voltage

For switching, AF driver and amplifier applications These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the PNP transistors BC807 and BC808 are recommended.

丝印代码：6D；45 V, 500 mA NPN general-purpose transistors

Features and benefits • High current • Three current gain selections

45 V, 500 mA NPN general-purpose transistors

General description NPN general-purpose transistors in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits • High current • Three current gain selections • AEC-Q101 qualified Applications • General-purpose switching and amplification

Plastic-Encapsulate Transistors

BC817-16(NPN) BC817-25(NPN) BC817-40(NPN) FEATURES ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807 (PNP)

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) Features ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807 (PNP)

Surface mount switching diode

Features • For general AF application. • Complementary PNP type available BC807. • High collector current, high current gain. • Low collector-emitter saturation voltage. • RoHS compliant package Applications • General purpose medium power amplifier. • Switching requiring collector currents

SOT-23 Plastic-Encapsulate Transistors

FEATURES * For general AF applications * High collector current * High current gain * Low collector-emitter saturation voltage * Complementary types: BC807 (PNP)

45 V, 500 mA NPN general-purpose transistors

NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\nTable 1. Product overview Type Number\n Package\n PNP complement\n Nexperia\n JEITA\n JEDEC\n BC817\n SOT23\n TO-236AB\n -\n BC807\n BC817-16\n BC807-16\n • High current\n• Three current gain selections\n• AEC-Q101 qualified;

NPN Silicon AF Transistors

● For general AF applications\n● High collector current\n● High current gain\n● Low collector-emitter saturation voltage\n● Complementary types: BC807, BC808 (PNP)

Switching and Amplifier Applications

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NPN Silicon Epitaxial Planar Transistor

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NPN Silicon Epitaxial Planar Transistors

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NPN Plastic-Encapsulate Transistors

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NPN Transistors

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Plastic-Encapsulate Transistors (NPN)

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Silicon NPN transistor in a SOT-23 Plastic Package

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High current application

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SOT-23 Plastic-Encapsulate Transistors

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NPN Silicon Planar Epitaxial Transistor

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SOT-23 - Power Transistor and Darlingtons

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晶体管

NPN GENERAL PURPOSE AMPLIFIER

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丝印代码：6D*；45 V, 500 mA NPN general-purpose transistors

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NPN Epitaxial Silicon Transistor

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SMD General Purpose NPN Transistors

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SMD General Purpose NPN Transistors

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Surface Mount General Purpose Si-Epi-Planar Transistors

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NPN Silicon Epitaxial Plannar Transistors

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EPITAXIAL PLANAR NPN TRANSISTOR

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EPITAXIAL PLANAR NPN TRANSISTOR

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