NPN general purpose transistor

DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complement: BC807. FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features mW Power Dissipation Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary PNP Types Available (BC807)

NPN Silicon AF Transistors

● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 807, BC 808 (PNP)

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features ● Ideally Suited for Automatic Insertion ● Epitaxial Planar Die Construction ● For Switching, AF Driver and Amplifier Applications ● Complementary PNP Types Available (BC807)

EPITAXAIL PLANAR NPN TRANSISTOR(for General Purpose, Switching)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Complementary to BC807.

NPN Small Signal Transistor 310mW

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Ideally Suited for Automatic Insertion •

NPN Silicon AF Transistors

● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807, BC808 (PNP)

Surface mount Si-Epitaxial PlanarTransistors

Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Switching, Amplification Commercial grade Suffix -Q: AEC-Q101 compliant 1) Suffix -AQ: in AEC-Q101 qualification 1) Mechanical Data 1) Taped an

Surface mount Si-Epitaxial PlanarTransistors

• Power dissipation 310 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

General Purpose Transistor NPN Silicon

General Purpose Transistor NPN Silicon P/b Lead(Pb)-Free

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features • Ideally Suited for Automatic Insertion • Epitaxial Planar Die Construction • Complementary NPN Types Available (BC807) • For switching and AF Amplifier Applications • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. Green Device (Note 3)

NPN General Purpose Amplifier

FEATURES ● For general AF application. ● Complementary PNP type available BC807. ● High collector current, high current gain. ● Low collector-emitter saturation voltage.

NPN GENERAL PURPOSE TRANSISTORS

VOLTAGE 45 Volts POWER 225 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 500mA • Pb free product are available : 99 Sn above can meet RoHS environment substance directive request

NPN Transistor

FEATURES • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807 (PNP)

300mW, NPN Small Signal Transistor

FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS complian - Packing code with suffix G means green compound (halogen-free)

NPN Silicon AF Transistor

● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807, BC808 (PNP)

TRANSISTOR (NPN)

FEATURES ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807 (PNP)

General Purpose Transistors

General Purpose Transistors • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

Plastic-Encapsulate Transistors

BC817-16(NPN) BC817-25(NPN) BC817-40(NPN) FEATURES ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807 (PNP)

Plastic-Encapsulate Transistors

BC817-16(NPN) BC817-25(NPN) BC817-40(NPN) FEATURES ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807 (PNP)

Surface mount switching diode

Features • For general AF application. • Complementary PNP type available BC807. • High collector current, high current gain. • Low collector-emitter saturation voltage. • RoHS compliant package Applications • General purpose medium power amplifier. • Switching requiring collector currents

Plastic-Encapsulate Transistors

FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP)

NPN EPTTAXIAL SILICON TRANSISTOR

NPN EPTTAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SIGANL TRANSISTORS

SURFACE MOUNT SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR BC817 and BC818 series devices are silicon NPN transistors, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications.

NPN General Purpose Amplifier

FEATURES ● For general AF application. ● Complementary PNP type available BC807. ● High collector current, high current gain. ● Low collector-emitter saturation voltage.

NPN general purpose amplifier

Features ● Capable of 0.3Watts(TA=25℃) of Power Dissipation ● Epoxy meets UL-94 V-0 flammability rating ● Halogen free available upon request by adding suffix ”HF” ● Moisture Sensitivity Level 1 ● Device Marking: BC817-16 6A BC817-25 6B

NPN SMALL SIGNAL TRANSISTOR

Features ● Halogen free available upon request by adding suffix -HF ● Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) ● Epoxy meets UL 94 V-0 flammability rating ● Moisure Sensitivity Level 1 ● Ideally Suited for Automatic Insertion ●

NPN General Purpose Amplifier

FEATURES ● For general AF application. ● Complementary PNP type available BC807. ● High collector current, high current gain. ● Low collector-emitter saturation voltage.

45 V, 500 mA NPN general-purpose transistors

Features and benefits • High current • Three current gain selections

TRANSISTO R (NPN)

Features For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP)

NPN GENERAL PURPOSE TRANSISTORS

FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)

45 V, 500 mA NPN general-purpose transistors

General description NPN general-purpose transistors in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits • High current • Three current gain selections • AEC-Q101 qualified Applications • General-purpose switching and amplification

NPN Silicon Epitaxial Planar Transistors

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NPN Small Signal Transistor 310mW

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Plastic-Encapsulate Transistors

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45V NPN SMALL SIGNAL TRANSISTOR

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Plastic-Encapsulated Multiple Transistors ??Quad Surface Mount (Case 751B-SO-16) ??NPN/PNP)

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NPN Transistors

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NPN, 45V, 0.5A, SOT23

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN 45V 0.8A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：SC-70，SOT-323 包装：散装 描述：TRANS NPN 45V 0.5A SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Transistors

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NPN GENERAL PURPOSE TRANSISTORS

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NPN Small Signal Transistor 310mW

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NPN Plastic Encapsulate Transistors

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NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

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300mW, NPN Small Signal Transistor

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NPN Small Signal Transistor 310mW

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SOT-23 BIPOLAR TRANSISTORS TRANSISTOR (NPN)

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NPN GENERAL PURPOSE TRANSISTORS

FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)

NPN GENERAL PURPOSE TRANSISTORS

FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features ● Ideally Suited for Automatic Insertion ● Epitaxial Planar Die Construction ● For Switching, AF Driver and Amplifier Applications ● Complementary PNP Types Available (BC807)

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features • Ideally Suited for Automatic Insertion • Epitaxial Planar Die Construction • Complementary NPN Types Available (BC807) • For switching and AF Amplifier Applications • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. Green Device (Note 3)

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

Silicon NPN General Purpose Transistors

Features  Silicon NPN Epitaxial type  Excellent DC current gain characteristics  General purpose amplifier application  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  PNP complement: BC807-AU series

Silicon NPN General Purpose Transistors

Features  Silicon NPN Epitaxial type  Excellent DC current gain characteristics  General purpose amplifier application  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  PNP complement: BC807-AU series

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

General Purpose Transistors NPN Silicon

General Purpose Transistors(NPN Silicon)?

General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available

General Purpose Transistors(NPN Silicon)?

General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available