丝印代码：5D-；PNP general purpose transistor

DESCRIPTION PNP transistor in a SOT323 plastic package, for general switching and amplification. FEATURES • High current • S- mini package.

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 225 mW • Plastic case SOT-323 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and r

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W (NPN)

EPITAXIAL PLANAR PNP TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Complementary to BC817W.

200mW, PNP Small Signal Transistor

Features ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin(Sn) lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant ◇ Green compound (Halogen free) with suffix G on packing code and prefix G on date code

丝印代码：5D-；45 V, 500 mA PNP general-purpose transistors

PNP Silicon Epitaxial Planar Transistor

FEATURES ● For general AF applications. ● High collector current. ● High current gain. ● Low collector-emitter saturation voltage. ● Complements the BC817W. APPLICATIONS ● For general purpose amplification and switching.

TRANSISTOR (PNP)

FEATURES • Ldeally suited for automatic insertion • epitaxial planar die construction • complementary NPN type available(BC817)

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES • Ldeally suited for automatic insertion • Epitaxial planar die construction • Complementary to BC817W

PNP Plastic Encapsulate Transistor

FEATURES • Ideally suited for automatic insertion • Epitaxial planar die construction • Complementary to BC817W

PNP Silicon Epitaxial Planar Transistors

PNP Silicon Epitaxial Planar Transistors for general purpose and switching applications These transistors are subdivided into three groups –16, -25, -40 according to their current gain.

SOT-323 Plastic-Encapsulate Transistors

FEATURES Ldeally suited for automatic insertion Epitaxial planar die construction Complementary to BC817W

Silicon PNP transistor in a SOT-323 Plastic Package

Descriptions Silicon PNP transistor in a SOT-323 Plastic Package. Features High current, low voltage complementary pair with BC817W. Applications General purpose switching and amplification.

丝印代码：5D；45 V, 500 mA PNP general-purpose transistors

Features and benefits • High current • Three current gain selections

45 V, 500 mA NPN general-purpose transistors

Features and benefits • High current • Three current gain selections

45 V, 500 mA PNP general-purpose transistors

PNP general-purpose transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.\nTable 1. Product overview Type Number\n Package\n NPN complement\n Nexperia\n JEITA\n JEDEC\n BC807W\n SOT323\n -\n SC-70\n BC817W\n BC807-16W\n BC817-1 • High current\n• Three current gain selections\n• AEC-Q101 qualified;

PNP Silicon Epitaxial Planar Transistor

文件：228.3 Kbytes Page：5 Pages

EPITAXIAL PLANAR PNP TRANSISTOR

文件：585.71 Kbytes Page：2 Pages

丝印代码：5D-；45 V, 500 mA PNP general-purpose transistors

文件：242.05 Kbytes Page：19 Pages

SMD General Purpose PNP Transistors

文件：149.71 Kbytes Page：2 Pages

45 V, 500 mA PNP general-purpose transistors

Features and benefits • High current • Three current gain selections

45 V, 500 mA NPN general-purpose transistors

Features and benefits • High current • Three current gain selections • Qualified according to AEC-Q101 and recommended for use in automotive applications

丝印代码：5D；45 V, 500 mA PNP general-purpose transistors

Features and benefits • High current • Three current gain selections • Qualified according to AEC-Q101 and recommended for use in automotive applications

45 V, 500 mA PNP general-purpose transistors

Features and benefits • High current • Three current gain selections • Qualified according to AEC-Q101 and recommended for use in automotive applications

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 45V 0.5A SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Silicon Epitaxial Planar Transistor

文件：228.3 Kbytes Page：5 Pages

PNP Plastic Encapsulate Transistor

文件：184.45 Kbytes Page：3 Pages

PNP Transistors

文件：1.23062 Mbytes Page：2 Pages

SMD General Purpose PNP Transistors

文件：149.71 Kbytes Page：2 Pages

45 V, 500 mA PNP general-purpose transistors

文件：242.05 Kbytes Page：19 Pages

PNP Transistors

文件：1.23062 Mbytes Page：2 Pages

PNP Transistors

文件：1.23062 Mbytes Page：2 Pages

General Purpose Transistor

General Purpose Transistor

PNP Transistors

文件：1.23062 Mbytes Page：2 Pages

封装/外壳：SC-70，SOT-323 包装：散装 描述：TRANS PNP 45V 0.5A SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

POWER TRANSISTORS(8.0A,150-200V,60W)

Single Element Detector

Element size 1,5x1,5 Thermally compensated option Designed for Gas Analysis applications The LHi 807 pyroelectric infrared-detector series is specially designed for gas analysis and monitorring applications . It includes pyroelectric element with FET in source follower connection and is avaliab

Integrated Circuit TV Sound Channel, 1W

Description: The NTE807 is a complete 1Watt sound channel in a 16–Lead DIP type package and is ideally suited for use in small screen TV or mobile FM radios. This device operates from a single 14V supply and provides VCC/2 output tracking as well as greater than 20dB of ripple rejection. The NTE8

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)