Integrated Circuit TV Sound Channel, 1W

Description: The NTE807 is a complete 1Watt sound channel in a 16–Lead DIP type package and is ideally suited for use in small screen TV or mobile FM radios. This device operates from a single 14V supply and provides VCC/2 output tracking as well as greater than 20dB of ripple rejection. The NTE8

Integrated Circuit TV Sound Channel, 1W

Thermal Cutoff (Thermal Fuse)

Description:\nTwenty One Thermal Cut−offs (also known as Thermal Fuses) are now included in the NTE product line. They are miniature, NON−RESETTABLE temperature sensitive devices designed to prevent appliances and electronic equipment from overheating. NTE thermal cutoffs are UL and CSA listed.\nLit

Thermal Cutoff (Thermal Fuse)

Description: Twenty One Thermal Cut−offs (also known as Thermal Fuses) are now included in the NTE product line. They are miniature, NON−RESETTABLE temperature sensitive devices designed to prevent appliances and electronic equipment from overheating. NTE thermal cutoffs are UL and CSA listed. L

Thermal Cutoff

Description: Twenty One Thermal Cut−offs (also known as Thermal Fuses) are now included in the NTE product line. They are miniature, NON−RESETTABLE temperature sensitive devices designed to prevent appliances and electronic equipment from overheating. NTE thermal cutoffs are UL and CSA listed. L

Thermal Cutoff

Description: Twenty One Thermal Cut−offs (also known as Thermal Fuses) are now included in the NTE product line. They are miniature, NON−RESETTABLE temperature sensitive devices designed to prevent appliances and electronic equipment from overheating. NTE thermal cutoffs are UL and CSA listed. L

POWER TRANSISTORS(8.0A,150-200V,60W)

Single Element Detector

Element size 1,5x1,5 Thermally compensated option Designed for Gas Analysis applications The LHi 807 pyroelectric infrared-detector series is specially designed for gas analysis and monitorring applications . It includes pyroelectric element with FET in source follower connection and is avaliab

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)