位置：首页 > IC中文资料第9674页 > UPA807
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
UPA807 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179) | NEC 瑞萨 |   | |
UPA807 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD | RENESAS 瑞萨 | | |
SILICON TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Bu | RENESAS 瑞萨 | | ||
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179) | NEC 瑞萨 | | ||
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179) | NEC 瑞萨 | | ||
SILICON TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Bu | RENESAS 瑞萨 | | ||
NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：252.11 Kbytes Page：12 Pages | CEL | | ||
NPN SILICON HIGH FREQUENCY TRANSISTOR | CEL | | ||
NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：252.11 Kbytes Page：12 Pages | CEL | | ||
POWER TRANSISTORS(8.0A,150-200V,60W)
| MOSPEC 统懋 | | ||
Single Element Detector Element size 1,5x1,5 Thermally compensated option Designed for Gas Analysis applications The LHi 807 pyroelectric infrared-detector series is specially designed for gas analysis and monitorring applications . It includes pyroelectric element with FET in source follower connection and is avaliab | PERKINELMER | | ||
Integrated Circuit TV Sound Channel, 1W Description: The NTE807 is a complete 1Watt sound channel in a 16–Lead DIP type package and is ideally suited for use in small screen TV or mobile FM radios. This device operates from a single 14V supply and provides VCC/2 output tracking as well as greater than 20dB of ripple rejection. The NTE8 | NTE | |
UPA807产品属性
- 类型
描述
- 型号
UPA807
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
SC70-6 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
NEC |
2450+ |
SOT363 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
MINI |
24+ |
SMD其他电子元 |
17 |
一级代理全新原装现货 |
|||
RENESAS |
24+ |
SOT-363 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
NEC |
25+ |
SC70-6 |
40794 |
NEC全新特价UPA807T-T1即刻询购立享优惠#长期有货 |
|||
NEC |
22+ |
SC70-6 |
20000 |
公司只做原装 品质保障 |
|||
NEC |
22+ |
SOT363 |
8200 |
全新进口原装现货 |
|||
NEC |
25+ |
SOT23-6 |
26200 |
原装现货,诚信经营! |
|||
NEC |
09+ |
SOT363 |
6000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
UPA807芯片相关品牌
UPA807规格书下载地址
UPA807参数引脚图相关
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UPA807数据表相关新闻
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2013-1-9
DdatasheetPDF页码索引
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