High Voltage & Fast Switching Darlington Transistor

High Voltage & Fast Switching Darlington Transistor • Using In Horizontal Output Stages of 110° Crt Video Displays • BUILT-IN SPEED-UP Diode Between Base and Emitter

FAST SWITCHING DARLINGTON TRANSISTOR

NPN SILICON DARLINGTON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BU806 and BU807 types are NPN Silicon Darlington Transistors designed for high voltage, high current, fast switching applications.

POWER TRANSISTORS(8.0A,150-200V,60W)

MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS

DESCRIPTION The devices are silicon Epitaxial Planar NPN power transistors in Darlington configuration with integrated base-emitter speed-up diode, mounted in TO-220 plastic package. They can be used in horizontal output stages of 110 oCRT video displays. ■ STMicroelectronics PREFERRED SALESTYP

FAST SWITCHING DARLINGTON TRANSISTORS

DESCRIPTION The BUB806/807 and BUBO6FI/807F! are silicon epitaxial planar NPN power transistors in Dar- lington configuration with integrated base-emitter speed-up diode, mounted respectively in TO-220 plastic package and ISOWATT220 fully isolated package. They are high voltage, high current

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN DARL 150V 8A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：卷带（TR） 描述：TRANS NPN DARL 150V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SEMICONDUCTORS

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Silicon NPN Darlington Power Transistor

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NPN SILICON DARLINGTON TRANSISTORv

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High Voltage: VCBO= 330V(Min)

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isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High Voltage: VCBO= 330V(Min) • Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS • Designed for use in horizontal deflection circuits in TV’s and CRT’s.

Silicon NPN Darlington Power Transistor

DESCRIPTION • High Voltage: VCBO= 330V(Min) • Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS • Designed for use in horizontal deflection circuits in TV’s and CRT’s.

FAST SWITCHING DARLINGTON TRANSISTORS

DESCRIPTION The BUB806/807 and BUBO6FI/807F! are silicon epitaxial planar NPN power transistors in Dar- lington configuration with integrated base-emitter speed-up diode, mounted respectively in TO-220 plastic package and ISOWATT220 fully isolated package. They are high voltage, high current

TRANS NPN DARL 150V 8A TO-220

Audio Broadcast Quality 800A Series

Features Deep-drawn steel case with tin plated finish, with two convenient 6-32 mounting studs with hardware. Includes wire leads (minimum length of 4). Frequency response +/- 0.5 db max. from 50 Hz. to 15 Khz. Insertion loss of apx. 1 db. Maximum power level +15 dbm. (except 841A, 842A & 84

807 Series High Temp Card Edge Connector | Green | 0.156 (3.96mm) Pitch | 0.200 (5.08mm) Row Spacing | Low Profile Insulator

Features 0.156 (3.96mm) Contact Spacing by 0.200 (5.08mm) Row Spacing Accepts .062 (1.57mm) Nominal Thickness P.C. Board Low Profile Insulator Body, 0.473 (12.01mm) Contact Termination Options include P.C. Tail, Wire Hole, Wire Wrap, 90 and Extender Board Bends Single or Dual Row Configuratio

Fiber Optic Receiver with Quantizer and Clock Recovery and Data Retiming

PRODUCT DESCRIPTION The AD807 provides the receiver functions of data quantization, signal level detect, clock recovery and data retiming for 155 Mbps NRZ data. The device, together with a PIN diode/preamplifier combination, can be used for a highly integrated, low cost, low power SONET OC-3 or S

Surface Mount Back Boxes

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Low Cost, 8W DIP Wide Input Range DC/DC Converters

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