45 V, 500 mA NPN general-purpose transistors

Features and benefits • High current • Three current gain selections • Qualified according to AEC-Q101 and recommended for use in automotive applications

丝印代码：5D；45 V, 500 mA PNP general-purpose transistors

Features and benefits • High current • Three current gain selections • Qualified according to AEC-Q101 and recommended for use in automotive applications

45 V, 500 mA PNP general-purpose transistors

PNP general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.\nTable 1. Product overview Type number\n Package\n NPN complement\n Nexperia\n JEDEC\nJEITA BC807W-Q\nSOT323 -\n SC-70\n BC817W-Q\n BC807-16W-Q\n BC817-16W-Q\ • High current\n• Three current gain selections\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

45 V, 500 mA PNP general-purpose transistors

Features and benefits • High current • Three current gain selections • Qualified according to AEC-Q101 and recommended for use in automotive applications

封装/外壳：SC-70，SOT-323 包装：散装 描述：TRANS PNP 45V 0.5A SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

POWER TRANSISTORS(8.0A,150-200V,60W)

Single Element Detector

Element size 1,5x1,5 Thermally compensated option Designed for Gas Analysis applications The LHi 807 pyroelectric infrared-detector series is specially designed for gas analysis and monitorring applications . It includes pyroelectric element with FET in source follower connection and is avaliab

Integrated Circuit TV Sound Channel, 1W

Description: The NTE807 is a complete 1Watt sound channel in a 16–Lead DIP type package and is ideally suited for use in small screen TV or mobile FM radios. This device operates from a single 14V supply and provides VCC/2 output tracking as well as greater than 20dB of ripple rejection. The NTE8

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)