型号 功能描述 生产厂家 企业 LOGO 操作

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

Fuji

富士通

Power filed Effect Transistor

FEATURES ◆ Robust High Voltage Termination ◆ Avalanche Energy Specified ◆ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ◆ Diode is Characterized for Use in Bridge Circuits ◆ IDSS and VDS(on) Specified at Elevated Temperature

JIANGSU

长电科技

IGBT with integrated diode in packages offering space saving advantage

文件:1.92413 Mbytes Page:16 Pages

Infineon

英飞凌

IGBT with integrated diode in packages offering space saving advantage

文件:1.74081 Mbytes Page:16 Pages

Infineon

英飞凌

POWER FIELD EFFECT TRANSISTOR

文件:191.5 Kbytes Page:6 Pages

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更新时间:2025-12-27 10:23:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INF
25+
SOT-23
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
INF进口原
24+
220-220F
5000
全现原装公司现货
Infineon(英飞凌)
23+
标准封装
7000
公司只做原装,可来电咨询
INF
12+
220-220F
890
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Infineon/英飞凌
22+
TO-220F
6000
十年配单,只做原装
INFINEON
24+
TO220F
36500
原装现货/放心购买
Infineon(英飞凌)
2021/2022+
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
INFINE
25+
NA
880000
明嘉莱只做原装正品现货
INFINEON/英飞凌
2022+
45
全新原装 货期两周
INFINEON/英飞凌
23+
TO-220F
50000
全新原装正品现货,支持订货

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