NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 3000 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. FEATURES: • PG = 7 dB min. at 0.5 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 3001 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. FEATURES: • PG = 7 dB min. at 1.0 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 3003 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. FEATURES: • PG = 5 dB min. at 3 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. FEATURES: • PG = 4.5 dB min. at 5 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

MICROSTRIP/STRIPLINE PIN DIODE SWITCH

DESCRIPTION: The ASI 5082-3170 is a Silicon PIN Diode Module Designed for Reflective Attenuator and Switching Applications from 1 to 18 GHz. FEATURES INCLUDE: • Direct Replacement for HP 5082-3170 • Isolation = 20 dB min. at 10 GHz • Hermetic Package

BATCH MATCHED BEAM LEAD SCHOTTKY DIODE

DESCRIPTION: The HSCH5315 is a Medium Barrier Beam Lead Schottky Diode Designed for X-Band Mixer Applications that is Batch Matched for NF and ZIF.

SCHOTTKY BARRIER MIXER DIODE

DESCRIPTION: The MA40192 is a Silicon Schottky Barrier Diode Designed for Starved LO Mixer Applications up to 10 GHz. FEATURES: • Replacement for MA/COM MA40192 • Available as matched pairs and matched quads • Hermetic Glass Package

SILICON HYPERABRUPT VARACTOR DIODE

DESCRIPTION: The ASI DKV6520-12 is an Silicon Hyperabrupt Varactor Diode Designed for VHF/UHF Filters and Oscillators Requiring Octave Tuning. FEATURES INCLUDE: • CT4 = 18 pF Min. • CT4/CT20 = 5.8 Typical • Hermetic Glass Package

SILICON HYPERABRUPT VARACTOR DIODE

DESCRIPTION: The DKV6534B is designed for UHF Filter and Oscillator Applications that Require Octave tuning. FEATURES: • TR = 5.8 Typical at VR = 3 /20 V • Q = 300 Typical at 3 V /50 MHz • Hermetic DO-7 Package

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The MSC3005 is Designed for Class C Amplifier Applications up to 3 GHz. FEATURES: • POUT = 5.0 W Typ. at 3 GHz • Common Base Configuration • Omnigold™ Metellization System

ZERO BIAS SCHOTTKY DIODE

DESCRIPTION: The ASI 3486is a Silicon Schottky Barrier Diode Designed for High Sensitivity Zero Bias Detector Applications up to 10 GHz. FEATURES INCLUDE: • Replacement for HSCH3486and MA4E928series • -56 dBm TSS Typical @ 10 GHz • Hermetic Glass Package

Sales Outline Drawing

文件：104.97 Kbytes Page：1 Pages

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：BUZZER MAGNETIC 5V 12.6X12.6 SMD 音频设备， 产品 警报器，蜂鸣器，警笛

Sales Outline Drawing

文件：183.62 Kbytes Page：1 Pages

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：BUZZER MAGNETIC 5V 12.6X12.6 SMD 音频设备， 产品 警报器，蜂鸣器，警笛