NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 3001 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. FEATURES: • PG = 7 dB min. at 1.0 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors . . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers • Specified 28 Volt, 3.0 GHz Characteristics: Output Power — 1.0 to 5

Light Emitting Diode Miniature, Diffused Red

Description: The NTE3001 is a diffused Gallium Arsenide Phosphide diode mounted in a two lead epoxy package with a red diffused lens. On forward bias, this device emits a spectrally narrow band of visible light which peaks at 660nm. The NTE3001 is intended for high volume indicator light app

SDH/SONET STM4/OC12 laser drivers

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