NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 3000 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. FEATURES: • PG = 7 dB min. at 0.5 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nThe ASI 3000 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz.FEATURES:\n• PG = 7 dB min. at 0.5 W / 3,000 MHz\n• Hermetic Microstrip Package\n• Omnigold™ Metalization System

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

Light Emitting Diode Miniature, Clear Red

Description: The NTE3000 is a high efficiency red source color device made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode in a two lead epoxy package with a clear lens. The NTE3000 is intended for high volume indicator light applications. Major usage is in applic

Silicon planar type

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