NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. FEATURES: • PG = 4.5 dB min. at 5 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

Thyratrons

Description Thyratrons are fast acting high voltage switches suitable for a variety of applications including radar, laser and scientific use. PerkinElmer’s thyratrons are constructed of ceramic and metal for strength and long life. Over 300 thyratron types are available from PerkinElmer. The t

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors . . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers • Specified 28 Volt, 3.0 GHz Characteristics: Output Power — 1.0 to 5

30A SUPER-FAST GLASS PASSIVATED RECTIFIER

Features ● Glass Passivated Die Construction ● Super-Fast Switching for High Efficiency ● High Current Capability ● Low Reverse Leakage Current ● High Surge Current Capability ● Plastic Material has UL Flammability Classification 94V-O

UHF POWER TRANSISTOR NPN SILICON

The TP3005 is designed for 960MHz base stations in bothanalog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. • Specified 26 Volts, 960 MHz Characteristics Output Power = 4.0 Watt

SDH/SONET STM1/OC3 and STM4/OC12 transceiver

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