封装/外壳：模块，引脚触点 包装：卷带（TR） 描述：IC RF SWITCH SPDT 8GHZ RF/IF，射频/中频和 RFID 射频开关

封装/外壳：模块，引脚触点 包装：卷带（TR） 描述：IC RF SWITCH SPDT 8GHZ RF/IF，射频/中频和 RFID 射频开关

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

N-Channel Enhancement-Mode Power Field-Effect Transistors Features ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

N-Channel Enhancement-Mode Power Field-Effect Transistors

文件：89.46 Kbytes Page：2 Pages

N-Channel Enhancement-Mode Power Field-Effect Transistors

文件：89.46 Kbytes Page：2 Pages