AQY41价格

参考价格:¥18.9917

型号:AQY410EH 品牌:Panasonic 备注:这里有AQY41多少钱,2025年最近7天走势,今日出价,今日竞价,AQY41批发/采购报价,AQY41行情走势销售排行榜,AQY41报价。
型号 功能描述 生产厂家&企业 LOGO 操作
AQY41

PhotoMOS Relay Dimensions

PhotoMOS Relay Dimensions

Panasonic

松下

AQY41

PhotoMOS Relay Dimensions

文件:171.29 Kbytes Page:3 Pages

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AQY41

PhotoMOS Relay Dimensions

文件:168.37 Kbytes Page:3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

AQY41

PhotoMOS Relay Dimensions

文件:168.37 Kbytes Page:3 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

AQY41

PhotoMOS Relay Dimensions

文件:168.37 Kbytes Page:3 Pages

Panasonic

松下

AQY41

PhotoMOS Relay Dimensions

文件:168.37 Kbytes Page:3 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

AQY41

PhotoMOS Relay Dimensions

文件:168.37 Kbytes Page:3 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

GU (General Use)-E Type 1-Channel (Form B) 4-pin Type

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS 2. Reinforced insulation 5,000 V ty

NAIS

松下电器

Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

Panasonic

松下

GU (General Use)-E Type 1-Channel (Form B) 4-pin Type

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS 2. Reinforced insulation 5,000 V ty

NAIS

松下电器

Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

Panasonic

松下

GU (General Use)-E Type 1-Channel (Form B) 4-pin Type

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS 2. Reinforced insulation 5,000 V ty

NAIS

松下电器

Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

Panasonic

松下

GU (General Use)-E Type 1-Channel (Form B) 4-pin Type

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS 2. Reinforced insulation 5,000 V ty

NAIS

松下电器

Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

Panasonic

松下

Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

Panasonic

松下

Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

Panasonic

松下

Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

Panasonic

松下

Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

Panasonic

松下

HIGH VOLTAGE, PHOTO MOS RELAY

[CLOBAL components & controls] DESCRIPTION The AQY414S is a single pole single throw (SPST), normally close (NC), Mos Relay. the relay can control Ac or DC loads currents up to 130 mA, with a supply voltage up to 400 V. The device is packaged in a 4 pin So package. This package offers an ins

ETCList of Unclassifed Manufacturers

未分类制造商

GU (General Use)-E Type 1-Channel (Form B) 4-pin Type

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS 2. Reinforced insulation 5,000 V ty

NAIS

松下电器

Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

Panasonic

松下

GU (General Use)-E Type 1-Channel (Form B) 4-pin Type

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS 2. Reinforced insulation 5,000 V ty

NAIS

松下电器

Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

Panasonic

松下

GU (General Use)-E Type 1-Channel (Form B) 4-pin Type

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS 2. Reinforced insulation 5,000 V ty

NAIS

松下电器

Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

Panasonic

松下

GU (General Use)-E Type 1-Channel (Form B) 4-pin Type

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS 2. Reinforced insulation 5,000 V ty

NAIS

松下电器

Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

Panasonic

松下

HIGH VOLTAGE, PHOTO MOS RELAY

[CLOBAL components & controls] DESCRIPTION The AQY414S is a single pole single throw (SPST), normally close (NC), Mos Relay. the relay can control Ac or DC loads currents up to 130 mA, with a supply voltage up to 400 V. The device is packaged in a 4 pin So package. This package offers an ins

ETCList of Unclassifed Manufacturers

未分类制造商

封装/外壳:4-DIP(0.300",7.62mm) 包装:散装 描述:SSR RELAY SPST-NC 130MA 0-350V 继电器 固态继电器

ETC

知名厂家

封装/外壳:4-SMD(0.300",7.62mm) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:SSR RELAY SPST-NC 130MA 0-350V 继电器 固态继电器

ETC

知名厂家

GU (General Use) Type SOP Series 1- Channel (Form B) 4-Pin Type

文件:45.73 Kbytes Page:3 Pages

NAIS

松下电器

GU (General Use) Type SOP Series 1- Channel (Form B) 4-Pin Type

文件:45.73 Kbytes Page:3 Pages

NAIS

松下电器

GU (General Use) Type SOP Series 1- Channel (Form B) 4-Pin Type

文件:45.73 Kbytes Page:3 Pages

NAIS

松下电器

GU (General Use) Type SOP Series 1- Channel (Form B) 4-Pin Type

文件:45.73 Kbytes Page:3 Pages

NAIS

松下电器

AQY41产品属性

  • 类型

    描述

  • 型号

    AQY41

  • 功能描述

    固态继电器-PCB安装 350v 130mA DIP Form B Norm-Clsd

  • RoHS

  • 制造商

    Omron Electronics

  • 负载电压额定值

    40 V

  • 负载电流额定值

    120 mA

  • 触点形式

    1 Form A(SPST-NO)

  • 输出设备

    MOSFET

  • 封装/箱体

    USOP-4

  • 安装风格

    SMD/SMT

更新时间:2025-8-17 17:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NAIS
2016+
SOP-4
3500
只做原装,假一罚十,公司可开17%增值税发票!
PANASON
24+
SOP
13500
免费送样原盒原包现货一手渠道联系
Panasonic(松下)
24+
4-SOP(0.173
19067
PANASONIC/松下
2020+
SOP4
880000
明嘉莱只做原装正品现货
Panasonic
25+23+
SOP
33577
绝对原装正品全新进口深圳现货
PANASON
22+
SOP4
8000
原装正品支持实单
PANASONI
25+
SOP4
3000
全新原装、诚信经营、公司现货销售!
PANASONIC/松下
24+
DIP4
8950
BOM配单专家,发货快,价格低
NVIA
24+
SMD-4
885
NAIS
00+
20
公司优势库存 热卖中!

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