GU (General Use)-E Type 1-Channel (Form B) 4-pin Type

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS 2. Reinforced insulation 5,000 V ty

Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

封装/外壳：4-SMD（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SSR RELAY SPST-NC 130MA 0-350V 继电器 固态继电器

封装/外壳：4-SMD（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SSR RELAY SPST-NC 130MA 0-350V 继电器 固态继电器

PhotoMOS GE 1b (4脚型)

Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

GU (General Use)-E Type 1-Channel (Form B) 4-pin Type

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS 2. Reinforced insulation 5,000 V ty

GU (General Use)-E Type 1-Channel (Form B) 4-pin Type

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS 2. Reinforced insulation 5,000 V ty

Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

PhotoMOS GE 1b (4脚型)

PhotoMOS GE 1b (4脚型)

Integrated Soldier Power and Data Management System (ISPDS) with USB.3.0 and 1G LAN Capabilities

FEATURES DESCRIPTION The advancement of technologies in the modern warfare has allowed the design of increasingly versatile tools in order to perform effectively and coherently in the battlefield. The modern infantry soldier, fully equipped with advanced weapon and communication systems, has

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Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

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