HIGH VOLTAGE, PHOTO MOS RELAY

[CLOBAL components & controls] DESCRIPTION The AQY414S is a single pole single throw (SPST), normally close (NC), Mos Relay. the relay can control Ac or DC loads currents up to 130 mA, with a supply voltage up to 400 V. The device is packaged in a 4 pin So package. This package offers an ins

GU (General Use)-E Type 1-Channel (Form B) 4-pin Type

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS 2. Reinforced insulation 5,000 V ty

Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

GU (General Use)-E Type 1-Channel (Form B) 4-pin Type

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS 2. Reinforced insulation 5,000 V ty

Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

GU (General Use)-E Type 1-Channel (Form B) 4-pin Type

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS 2. Reinforced insulation 5,000 V ty

Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

GU (General Use)-E Type 1-Channel (Form B) 4-pin Type

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS 2. Reinforced insulation 5,000 V ty

HIGH VOLTAGE, PHOTO MOS RELAY

[CLOBAL components & controls] DESCRIPTION The AQY414S is a single pole single throw (SPST), normally close (NC), Mos Relay. the relay can control Ac or DC loads currents up to 130 mA, with a supply voltage up to 400 V. The device is packaged in a 4 pin So package. This package offers an ins

封装/外壳：4-DIP（0.300"，7.62mm） 包装：散装 描述：SSR RELAY SPST-NC 120MA 0-400V 继电器 固态继电器

封装/外壳：4-SMD（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SSR RELAY SPST-NC 120MA 0-400V 继电器 固态继电器

GU (General Use) Type SOP Series 1- Channel (Form B) 4-Pin Type

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