FEATURES

1. Low on resistance for normally closed type

This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method.

Cross section of the normally-closed type of power MOS

2. Reinforced insulation 5,000 V type

More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation).

3. Compact 4-pin DIP size

The device comes in a compact (W)6.4×(L)4.78×(H)3.2mm (W).252×(L).188×(H).126inch, 4-pin DIP size

4. Controls low-level analog signals

PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion.

5. High sensitivity, low ON resistance

Can control a maximum 0.13 A load current with a 5 mA input current. Low ON resistance of 18Ω (AQY410EH). Stable

operation because there are no metallic contact parts.

6. Low-level off state leakage current

TYPICAL APPLICATIONS

• Modem

• Telephone equipment

• Security equipment

• Sensors