AQV41价格

参考价格:¥20.9563

型号:AQV410EH 品牌:Panasonic 备注:这里有AQV41多少钱,2025年最近7天走势,今日出价,今日竞价,AQV41批发/采购报价,AQV41行情走势销售排行榜,AQV41报价。
型号 功能描述 生产厂家 企业 LOGO 操作
AQV41

PhotoMOS Relay Dimensions

PhotoMOS Relay Dimensions

Panasonic

松下

AQV41

PhotoMOS Relay Dimensions

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etc2List of Unclassifed Manufacturers

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AQV41

PhotoMOS Relay Dimensions

文件:168.37 Kbytes Page:3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

AQV41

PhotoMOS Relay Dimensions

文件:168.37 Kbytes Page:3 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

AQV41

PhotoMOS Relay Dimensions

文件:168.37 Kbytes Page:3 Pages

Panasonic

松下

AQV41

PhotoMOS Relay Dimensions

文件:168.37 Kbytes Page:3 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

AQV41

PhotoMOS Relay Dimensions

文件:168.37 Kbytes Page:3 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

PhotoMOS RELAYS

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo

NAIS

松下电器

PhotoMOS RELAYS

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo

NAIS

松下电器

PhotoMOS RELAYS

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo

NAIS

松下电器

PhotoMOS RELAYS

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo

NAIS

松下电器

PhotoMOS RELAYS

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo

NAIS

松下电器

Normally closed 6-pin type of 400V load voltage Measuring instruments

FEATURES 1. Low on-resistance (typ. 26Ω) for normally-closed type This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit

Panasonic

松下

Normally closed 6-pin type of 400V load voltage Measuring instruments

FEATURES 1. Low on-resistance (typ. 26Ω) for normally-closed type This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit

Panasonic

松下

Normally closed 6-pin type of 400V load voltage Measuring instruments

FEATURES 1. Low on-resistance (typ. 26Ω) for normally-closed type This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit

Panasonic

松下

Normally closed 6-pin type of 400V load voltage Measuring instruments

FEATURES 1. Low on-resistance (typ. 26Ω) for normally-closed type This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit

Panasonic

松下

PhotoMOS RELAYS

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo

NAIS

松下电器

PhotoMOS RELAYS

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo

NAIS

松下电器

PhotoMOS RELAYS

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo

NAIS

松下电器

PhotoMOS RELAYS

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo

NAIS

松下电器

PhotoMOS RELAYS

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo

NAIS

松下电器

PhotoMOS RELAYS

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo

NAIS

松下电器

PhotoMOS RELAYS

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo

NAIS

松下电器

PhotoMOS RELAYS

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo

NAIS

松下电器

封装/外壳:6-DIP(0.300",7.62mm) 包装:管件 描述:SSR RELAY DPST-NC 130MA 0-350V 继电器 固态继电器

ETC

知名厂家

PhotoMOS GE 1b (6脚型)

Panasonic

松下

PhotoMOS GE 1b (6脚型)

Panasonic

松下

封装/外壳:6-SMD(0.300",7.62mm) 包装:散装 描述:SSR RELAY DPST-NC 130MA 0-350V 继电器 固态继电器

ETC

知名厂家

PhotoMOS GE 1b (6脚型)

Panasonic

松下

HIGH VOLTAGE, PHOTO MOS RELAY

文件:157.89 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HIGH VOLTAGE, PHOTO MOS RELAY

文件:168.96 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HIGH VOLTAGE, PHOTO MOS RELAY

文件:168.96 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HIGH VOLTAGE, PHOTO MOS RELAY

文件:157.89 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

AQV41产品属性

  • 类型

    描述

  • 型号

    AQV41

  • 制造商

    NAIS

  • 制造商全称

    Nais(Matsushita Electric Works)

  • 功能描述

    PhotoMOS RELAYS

更新时间:2025-9-26 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Panasonic(松下)
24+
SMD
31768
免费送样,账期支持,原厂直供,没有中间商赚差价
PANASON/松下
24+
NA/
3335
原装现货,当天可交货,原型号开票
PANASONIC
2016+
DIP
23652
全新原装,假一罚十,公司主营继电器!
NAIS
23+
DIP
20000
全新原装假一赔十
NAIS
20+
SOP6
2860
原厂原装正品价格优惠公司现货欢迎查询
NAIS
22+
SOP6
100000
代理渠道/只做原装/可含税
NAIS
25+
SOP6
54658
百分百原装现货 实单必成
PANASONIC/松下
25+
SMD6
32360
PANASONIC/松下全新特价AQV412EHAX即刻询购立享优惠#长期有货
xilinx
22+
SOP6
6800
NAIS
24+
SOP6
20000
全新原厂原装,进口正品现货,正规渠道可含税!!

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