位置：首页 > IC中文资料第5769页 > AQV41
AQV41价格
参考价格：￥20.9563
型号：AQV410EH 品牌：Panasonic 备注：这里有AQV41多少钱，2026年最近7天走势，今日出价，今日竞价，AQV41批发/采购报价，AQV41行情走势销售排行榜，AQV41报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AQV41 | PhotoMOS Relay Dimensions PhotoMOS Relay Dimensions | Panasonic 松下 |   | |
AQV41 | PhotoMOS Relay Dimensions 文件：171.29 Kbytes Page：3 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
AQV41 | PhotoMOS Relay Dimensions 文件：168.37 Kbytes Page：3 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
AQV41 | PhotoMOS Relay Dimensions 文件：168.37 Kbytes Page：3 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
AQV41 | PhotoMOS Relay Dimensions 文件：168.37 Kbytes Page：3 Pages | Panasonic 松下 | | |
AQV41 | PhotoMOS Relay Dimensions 文件：168.37 Kbytes Page：3 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
AQV41 | PhotoMOS Relay Dimensions 文件：168.37 Kbytes Page：3 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | | ||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | | ||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | | ||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | | ||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | | ||
Normally closed 6-pin type of 400V load voltage Measuring instruments FEATURES 1. Low on-resistance (typ. 26Ω) for normally-closed type This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit | Panasonic 松下 | | ||
Normally closed 6-pin type of 400V load voltage Measuring instruments FEATURES 1. Low on-resistance (typ. 26Ω) for normally-closed type This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit | Panasonic 松下 | | ||
Normally closed 6-pin type of 400V load voltage Measuring instruments FEATURES 1. Low on-resistance (typ. 26Ω) for normally-closed type This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit | Panasonic 松下 | | ||
Normally closed 6-pin type of 400V load voltage Measuring instruments FEATURES 1. Low on-resistance (typ. 26Ω) for normally-closed type This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit | Panasonic 松下 | | ||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | | ||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | | ||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | | ||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | | ||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | | ||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | | ||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | | ||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | | ||
封装/外壳：6-DIP（0.300"，7.62mm） 包装：管件 描述：SSR RELAY DPST-NC 130MA 0-350V 继电器 固态继电器 | ETC 知名厂家 | ETC | | |
PhotoMOS GE 1b (6脚型) | Panasonic 松下 | | ||
PhotoMOS GE 1b (6脚型) | Panasonic 松下 | | ||
封装/外壳：6-SMD（0.300"，7.62mm） 包装：散装 描述：SSR RELAY DPST-NC 130MA 0-350V 继电器 固态继电器 | ETC 知名厂家 | ETC | | |
PhotoMOS GE 1b (6脚型) | Panasonic 松下 | | ||
HIGH VOLTAGE, PHOTO MOS RELAY 文件：157.89 Kbytes Page：2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
HIGH VOLTAGE, PHOTO MOS RELAY 文件：168.96 Kbytes Page：2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
HIGH VOLTAGE, PHOTO MOS RELAY 文件：168.96 Kbytes Page：2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
HIGH VOLTAGE, PHOTO MOS RELAY 文件：157.89 Kbytes Page：2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
AQV41产品属性
- 类型
描述
- 型号
AQV41
- 制造商
NAIS
- 制造商全称
Nais(Matsushita Electric Works)
- 功能描述
PhotoMOS RELAYS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANASON/松下 |
24+ |
NA/ |
5236 |
原装现货,当天可交货,原型号开票 |
|||
PANASONIC/松下 |
25+ |
SOP6 |
2000 |
原装正品,欢迎来电咨询! |
|||
NAIS |
2025+ |
DIP |
2500 |
原装进口价格优 请找坤融电子! |
|||
松下panasonic |
24+ |
全新原装 |
6180 |
||||
PANASONIC |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
|||
PANASONIC |
新 |
10000 |
全新原装 货期两周 |
||||
NAIS |
25+ |
DIPSOP6 |
20000 |
全新原装正品支持含税 |
|||
PANASONIC/松下 |
23+ |
SOP6 |
6000 |
专注配单,只做原装进口现货 |
|||
PANASONIC(松下) |
2447 |
DIP-6 |
115000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
PANASONIC |
25+ |
6-DIP |
3796 |
就找我吧!--邀您体验愉快问购元件! |
AQV41规格书下载地址
AQV41参数引脚图相关
- bc01
- ba028
- b533
- avr单片机
- avl
- avb
- atmega8
- atmega16
- atmega
- at91sam9263
- at91sam9261
- at89s52
- at89s51
- at89c52
- at89c51
- at89c2051
- as3410
- arm应用
- arm内核
- arm11
- AQW214A
- AQW214
- AQW212S
- AQW212A
- AQW212
- AQW210S
- AQW210A
- AQW210
- AQW21
- AQV454H
- AQV454A
- AQV454
- AQV453AX
- AQV453A
- AQV453
- AQV45
- AQV414SZ
- AQV414SX-CUTTAPE
- AQV414SX
- AQV414S
- AQV414HA
- AQV414H
- AQV414EHA
- AQV414EH
- AQV414EA
- AQV414E
- AQV414AZ
- AQV414A
- AQV414
- AQV410EHA
- AQV410EH
- AQV410
- AQV259HA
- AQV259H
- AQV259AZ
- AQV259A
- AQV259
- AQV258HAZ
- AQV258HAXC38
- AQV258HAX
- AQV258AZ
- AQV258A
- AQV258
- AQV257X
- AQV257AX
- AQV257A
- AQV257
- AQV255GS
- AQV255A
- AQV255
- AQV254S
- AQV254HAZ
- AQV254H
- AQV254A
- AQV254
- AQV253H
- AQV253A
- AQV253
- AQV252A
- AQV252
- AQV251A
- AQV251
- AQV25
- AQV234A
AQV41数据表相关新闻
AQV210EAX
AQV210EAX
2023-4-25AQW614EH
AQW614EH
2020-11-2AQW284EHAX
+ 125 C 固态继电器-PCB安装 , 3 A 固态继电器-PCB安装 , 20 VAC to 240 VAC 固态继电器-PCB安装 , SIL-4 固态继电器-PCB安装 , PCB Mount 固态继电器-PCB安装 , 200 VDC 2 Form A (DPST-NO) 固态继电器-PCB安装
2020-10-20AQV258HAX专营原装继电器 可长期订货
焕盛达-专注原装 真芯服务；当天下单，当天发货；
2020-8-4AQW210EH只做原装.深圳北京可交易
焕盛达-专注原装 真芯服务；当天下单，当天发货；
2020-8-4AquanexIP67密封式MicroUSB
GCT 的 micro USB Type-B 连接器提供 IP67 等级、一体式不锈钢外壳和模制硅胶密封
2019-9-6
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
