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AQV41价格
参考价格:¥20.9563
型号:AQV410EH 品牌:Panasonic 备注:这里有AQV41多少钱,2025年最近7天走势,今日出价,今日竞价,AQV41批发/采购报价,AQV41行情走势销售排行榜,AQV41报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
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AQV41 | PhotoMOS Relay Dimensions PhotoMOS Relay Dimensions | Panasonic 松下 | ||
AQV41 | PhotoMOS Relay Dimensions 文件:171.29 Kbytes Page:3 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | ||
AQV41 | PhotoMOS Relay Dimensions 文件:168.37 Kbytes Page:3 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
AQV41 | PhotoMOS Relay Dimensions 文件:168.37 Kbytes Page:3 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | ||
AQV41 | PhotoMOS Relay Dimensions 文件:168.37 Kbytes Page:3 Pages | Panasonic 松下 | ||
AQV41 | PhotoMOS Relay Dimensions 文件:168.37 Kbytes Page:3 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | ||
AQV41 | PhotoMOS Relay Dimensions 文件:168.37 Kbytes Page:3 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | ||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | |||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | |||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | |||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | |||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | |||
Normally closed 6-pin type of 400V load voltage Measuring instruments FEATURES 1. Low on-resistance (typ. 26Ω) for normally-closed type This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit | Panasonic 松下 | |||
Normally closed 6-pin type of 400V load voltage Measuring instruments FEATURES 1. Low on-resistance (typ. 26Ω) for normally-closed type This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit | Panasonic 松下 | |||
Normally closed 6-pin type of 400V load voltage Measuring instruments FEATURES 1. Low on-resistance (typ. 26Ω) for normally-closed type This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit | Panasonic 松下 | |||
Normally closed 6-pin type of 400V load voltage Measuring instruments FEATURES 1. Low on-resistance (typ. 26Ω) for normally-closed type This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit | Panasonic 松下 | |||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | |||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | |||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | |||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | |||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | |||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | |||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | |||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | |||
封装/外壳:6-DIP(0.300",7.62mm) 包装:管件 描述:SSR RELAY DPST-NC 130MA 0-350V 继电器 固态继电器 | ETC 知名厂家 | ETC | ||
PhotoMOS GE 1b (6脚型) | Panasonic 松下 | |||
PhotoMOS GE 1b (6脚型) | Panasonic 松下 | |||
封装/外壳:6-SMD(0.300",7.62mm) 包装:散装 描述:SSR RELAY DPST-NC 130MA 0-350V 继电器 固态继电器 | ETC 知名厂家 | ETC | ||
PhotoMOS GE 1b (6脚型) | Panasonic 松下 | |||
HIGH VOLTAGE, PHOTO MOS RELAY 文件:157.89 Kbytes Page:2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
HIGH VOLTAGE, PHOTO MOS RELAY 文件:168.96 Kbytes Page:2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
HIGH VOLTAGE, PHOTO MOS RELAY 文件:168.96 Kbytes Page:2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
HIGH VOLTAGE, PHOTO MOS RELAY 文件:157.89 Kbytes Page:2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |
AQV41产品属性
- 类型
描述
- 型号
AQV41
- 制造商
NAIS
- 制造商全称
Nais(Matsushita Electric Works)
- 功能描述
PhotoMOS RELAYS
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Panasonic(松下) |
24+ |
SMD |
31768 |
免费送样,账期支持,原厂直供,没有中间商赚差价 |
|||
PANASON/松下 |
24+ |
NA/ |
3335 |
原装现货,当天可交货,原型号开票 |
|||
PANASONIC |
2016+ |
DIP |
23652 |
全新原装,假一罚十,公司主营继电器! |
|||
NAIS |
23+ |
DIP |
20000 |
全新原装假一赔十 |
|||
NAIS |
20+ |
SOP6 |
2860 |
原厂原装正品价格优惠公司现货欢迎查询 |
|||
NAIS |
22+ |
SOP6 |
100000 |
代理渠道/只做原装/可含税 |
|||
NAIS |
25+ |
SOP6 |
54658 |
百分百原装现货 实单必成 |
|||
PANASONIC/松下 |
25+ |
SMD6 |
32360 |
PANASONIC/松下全新特价AQV412EHAX即刻询购立享优惠#长期有货 |
|||
xilinx |
22+ |
SOP6 |
6800 |
||||
NAIS |
24+ |
SOP6 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
AQV41芯片相关品牌
AQV41规格书下载地址
AQV41参数引脚图相关
- bc01
- ba028
- b533
- avr单片机
- avl
- avb
- atmega8
- atmega16
- atmega
- at91sam9263
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- at89s52
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- as3410
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- arm内核
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- AQW214A
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- AQV410EHA
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- AQV255GS
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- AQV254
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- AQV253A
- AQV253
- AQV252A
- AQV252
- AQV251A
- AQV251
- AQV25
- AQV234A
AQV41数据表相关新闻
AQV210EAX
AQV210EAX
2023-4-25AQW614EH
AQW614EH
2020-11-2AQW284EHAX
+ 125 C 固态继电器-PCB安装 , 3 A 固态继电器-PCB安装 , 20 VAC to 240 VAC 固态继电器-PCB安装 , SIL-4 固态继电器-PCB安装 , PCB Mount 固态继电器-PCB安装 , 200 VDC 2 Form A (DPST-NO) 固态继电器-PCB安装
2020-10-20AQV258HAX专营原装继电器 可长期订货
焕盛达-专注原装 真芯服务;当天下单,当天发货;
2020-8-4AQW210EH只做原装.深圳北京可交易
焕盛达-专注原装 真芯服务;当天下单,当天发货;
2020-8-4AquanexIP67密封式MicroUSB
GCT 的 micro USB Type-B 连接器提供 IP67 等级、一体式不锈钢外壳和模制硅胶密封
2019-9-6
DdatasheetPDF页码索引
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