FEATURES

1. Low on-resistance (typ. 26Ω) for normally-closed type

This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method.

2. Controls low-level analog signals

PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion.

3. High sensitivity and low on resistance

Can control max. 0.15 A load current with 5 mA input current.

4. Low-level off state leakage current of max. 1 µA

TYPICAL APPLICATIONS

• Security equipment

• Telephone equipment (Dial pulse)

• Measuring instruments