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AQV414价格
参考价格：￥9.2206
型号：AQV414 品牌：PANASONIC 备注：这里有AQV414多少钱，2025年最近7天走势，今日出价，今日竞价，AQV414批发/采购报价，AQV414行情走势销售排行榜，AQV414报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AQV414 | Normally closed 6-pin type of 400V load voltage Measuring instruments FEATURES 1. Low on-resistance (typ. 26Ω) for normally-closed type This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit | Panasonic 松下 |   | |
AQV414 | 封装/外壳：6-DIP（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SSR RELAY DPST-NC 120MA 0-400V 继电器 固态继电器 | ETC 知名厂家 | ETC | |
AQV414 | 封装/外壳：6-DIP（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SSR RELAY DPST-NC 120MA 0-400V 继电器 固态继电器 | ETC 知名厂家 | ETC | |
AQV414 | HIGH VOLTAGE, PHOTO MOS RELAY | ETC 知名厂家 | ETC | |
AQV414 | PhotoMOS GU 1b (6脚型) | Panasonic 松下 | | |
AQV414 | HIGH VOLTAGE, PHOTO MOS RELAY 文件：157.89 Kbytes Page：2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
AQV414 | HIGH VOLTAGE, PHOTO MOS RELAY 文件：168.96 Kbytes Page：2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
Normally closed 6-pin type of 400V load voltage Measuring instruments FEATURES 1. Low on-resistance (typ. 26Ω) for normally-closed type This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit | Panasonic 松下 | | ||
Normally closed 6-pin type of 400V load voltage Measuring instruments FEATURES 1. Low on-resistance (typ. 26Ω) for normally-closed type This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit | Panasonic 松下 | | ||
Normally closed 6-pin type of 400V load voltage Measuring instruments FEATURES 1. Low on-resistance (typ. 26Ω) for normally-closed type This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit | Panasonic 松下 | | ||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | | ||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | | ||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | | ||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | | ||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | | ||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | | ||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | | ||
PhotoMOS RELAYS FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo | NAIS 松下电器 | | ||
HIGH VOLTAGE, PHOTO MOS RELAY 文件：168.96 Kbytes Page：2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
PhotoMOS GU 1b (6脚型) | Panasonic 松下 | | ||
HIGH VOLTAGE, PHOTO MOS RELAY 文件：157.89 Kbytes Page：2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
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AQV414产品属性
- 类型
描述
- 型号
AQV414
- 功能描述
固态继电器-PCB安装 120MA 400V 6PIN SPST-NC
- RoHS
否
- 制造商
Omron Electronics
- 负载电压额定值
40 V
- 负载电流额定值
120 mA
- 触点形式
1 Form A(SPST-NO)
- 输出设备
MOSFET
- 封装/箱体
USOP-4
- 安装风格
SMD/SMT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Panasonic(松下) |
24+ |
SMD |
31768 |
免费送样,账期支持,原厂直供,没有中间商赚差价 |
|||
NAIS |
23+ |
DIP-6 |
20000 |
全新原装假一赔十 |
|||
NAIS |
20+ |
SOP6 |
2860 |
原厂原装正品价格优惠公司现货欢迎查询 |
|||
PANASONIC |
2016+ |
DIP |
26520 |
全新原装,假一罚十,公司主营继电器! |
|||
NAIS |
25+ |
DIP-8 |
2700 |
全新原装自家现货优势! |
|||
24+ |
N/A |
57000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
NAIS |
2025+ |
DIP |
2500 |
原装进口价格优 请找坤融电子! |
|||
COSMO |
10+ |
DIP-6 |
7800 |
全新原装正品,现货销售 |
|||
PANASONIC/松下 |
25+ |
SOP-6 |
880000 |
明嘉莱只做原装正品现货 |
|||
NAIS |
23+ |
SOP6 |
7300 |
专注配单,只做原装进口现货 |
AQV414芯片相关品牌
AQV414规格书下载地址
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AQV414数据表相关新闻
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2019-9-6
DdatasheetPDF页码索引
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