位置:AQV410EH > AQV410EH详情
AQV410EH中文资料
AQV410EH数据手册规格书PDF详情
FEATURES
1. Low on resistance for normally closed type
This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method.
2. Controls low-level analog signals
PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion.
3. High sensitivity, low ON resistance
Can control a maximum 0.13 A load current with a 5 mA input current. Low ON resistance of 18 Ω (AQV410EH). Stable operation because there are no metallic contact parts.
4. Low-level off state leakage current
The SSR has an off state leakage current of several milliamperes, whereas the PhooMOS relay has only 100 pA even with he rated load voltage of 400 V AQV414E).
5. Reinforced insulation 5,000 V type also available.
More than 0.4 mm internal insulation disance between inputs and outputs. Conorms to EN41003, EN60950 (reinforced nsulation).
TYPICAL APPLICATIONS
• Security equipment
• Telepone equipment (Dial pulse)
• Measuring equipment
AQV410EH产品属性
- 类型
描述
- 型号
AQV410EH
- 功能描述
固态继电器-PCB安装 350v 130mA DIP Form B Norm-Clsd
- RoHS
否
- 制造商
Omron Electronics
- 负载电压额定值
40 V
- 负载电流额定值
120 mA
- 触点形式
1 Form A(SPST-NO)
- 输出设备
MOSFET
- 封装/箱体
USOP-4
- 安装风格
SMD/SMT
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NAIS |
10+ |
DIP SOP |
11936 |
原装现货 |
|||
NAIS |
06+ |
DIP6 |
2000 |
||||
NAIS |
25+ |
DIPSOP |
14781 |
全新原装正品支持含税 |
|||
NAIS |
24+ |
DIP8 |
5650 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
NAIS |
24+ |
DIP8 |
6540 |
原装现货/欢迎来电咨询 |
|||
松下panasonic |
24+ |
全新原装 |
6180 |
||||
PANASONIC/松下 |
23+ |
DIP6 |
98900 |
原厂原装正品现货!! |
|||
PANASONIC |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
|||
panasoni |
专业光耦 |
DIPSOP6 |
65800 |
光耦原装优势主营型号-可开原型号增税票 |
|||
Panasonic |
2022+ |
1 |
全新原装 货期两周 |
AQV410EHA 价格
参考价格:¥21.0650
AQV410EH 资料下载更多...
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NAIS相关芯片制造商
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