PhotoMOS RELAYS

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo

封装/外壳：6-DIP（0.300"，7.62mm） 包装：管件 描述：SSR RELAY DPST-NC 130MA 0-350V 继电器 固态继电器

封装/外壳：6-DIP（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SSR RELAY DPST-NC 130MA 0-350V 继电器 固态继电器

PhotoMOS GE 1b (6脚型)

PhotoMOS RELAYS

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo

PhotoMOS RELAYS

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo

PhotoMOS RELAYS

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo

PhotoMOS GE 1b (6脚型)

PhotoMOS GE 1b (6脚型)

Integrated Soldier Power and Data Management System (ISPDS) with USB.3.0 and 1G LAN Capabilities

FEATURES DESCRIPTION The advancement of technologies in the modern warfare has allowed the design of increasingly versatile tools in order to perform effectively and coherently in the battlefield. The modern infantry soldier, fully equipped with advanced weapon and communication systems, has

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