APT13003D价格
参考价格：￥0.9599
型号：APT13003DI-G1 品牌：Diodes Incorporated 备注：这里有APT13003D多少钱，2026年最近7天走势，今日出价，今日竞价，APT13003D批发/采购报价，APT13003D行情走势销售排行榜，APT13003D报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
APT13003D | HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description The APT13003D is a high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with low output power. The APT13003D is available in TO-92 (bulk or ammo packing), TO-126 and TO-251 packages. Features • | BCDSEMI 新进半导体 |   | |
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description The APT13003D is a high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with low output power. The APT13003D is available in TO-92 (bulk or ammo packing), TO-126 and TO-251 packages. Features • | BCDSEMI 新进半导体 | | ||
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description The APT13003D is a high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with low output power. The APT13003D is available in TO-92 (bulk or ammo packing), TO-126 and TO-251 packages. Features • | BCDSEMI 新进半导体 | | ||
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description The APT13003D is a high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with low output power. The APT13003D is available in TO-92 (bulk or ammo packing), TO-126 and TO-251 packages. Features • | BCDSEMI 新进半导体 | | ||
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description The APT13003D is a high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with low output power. The APT13003D is available in TO-92 (bulk or ammo packing), TO-126 and TO-251 packages. Features • | BCDSEMI 新进半导体 | | ||
450V NPN HIGH VOLTAGE POWER TRANSISTOR 文件：390.73 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
NPN TRANSISTOR | DIODES 美台半导体 | | ||
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：散装 描述：TRANS NPN 450V 1.5A TO251 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | DIODES 美台半导体 | | ||
NPN TRANSISTOR | DIODES 美台半导体 | | ||
封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR） 描述：TRANS NPN DARL 450V 1.5A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | DIODES 美台半导体 | | ||
NPN TRANSISTOR | DIODES 美台半导体 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | |
APT13003D产品属性
- 类型
描述
- AutomotiveCompliantPPAP：
No
- ProductType：
NPN
- IC：
1.5A
- ICM：
3A
- PD：
24W
- hFE：
16Min
- hFE(@IC)：
0.5A
- hFE(Min2)：
5
- hFE(@IC2)：
1A
- VCE(SAT)Max：
300mV
- VCE(SAT)(@IC/IB)：
0.5/100A/mA
- VCE(SAT)(Max.2)：
400mV
- VCE(SAT)(@IC/IB2)：
1/250A/mA
- fT：
4
- RCE(SAT)：
N/AmΩ
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES(美台) |
24+ |
TO-126 |
3727 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
DIODES(美台) |
25+ |
TO-126 |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
DIODES/美台 |
22+ |
TO-251-3 |
20000 |
公司只做原装 品质保障 |
|||
DIODES/美台 |
20+ |
SMD |
88800 |
DIODES原装优势主营型号-可开原型号增税票 |
|||
DIODES/美台 |
21+ |
TO126 |
1820 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
BCD |
2223+ |
TO-92 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
DiodesZetex |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
DIODES/美台 |
25+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
DIODES |
12+ |
TO-126 |
70 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
DIODES/美台 |
2450+ |
TO-251-3 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
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APT13003D规格书下载地址
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DdatasheetPDF页码索引
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