APT13003DI价格
参考价格：￥0.9599
型号：APT13003DI-G1 品牌：Diodes Incorporated 备注：这里有APT13003DI多少钱，2026年最近7天走势，今日出价，今日竞价，APT13003DI批发/采购报价，APT13003DI行情走势销售排行榜，APT13003DI报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
APT13003DI | NPN TRANSISTOR | DIODES 美台半导体 |   | |
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description The APT13003D is a high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with low output power. The APT13003D is available in TO-92 (bulk or ammo packing), TO-126 and TO-251 packages. Features • | BCDSEMI 新进半导体 | | ||
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：散装 描述：TRANS NPN 450V 1.5A TO251 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | DIODES 美台半导体 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | |
APT13003DI产品属性
- 类型
描述
- AutomotiveCompliantPPAP：
No
- ProductType：
NPN
- IC：
1.5A
- ICM：
3A
- PD：
24W
- hFE：
16Min
- hFE(@IC)：
0.5A
- hFE(Min2)：
5
- hFE(@IC2)：
1A
- VCE(SAT)Max：
300mV
- VCE(SAT)(@IC/IB)：
0.5/100A/mA
- VCE(SAT)(Max.2)：
400mV
- VCE(SAT)(@IC/IB2)：
1/250A/mA
- fT：
4
- RCE(SAT)：
N/AmΩ
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Diodes Incorporated |
25+ |
TO-251 |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
Diodes Incorporated |
25+ |
TO-251 |
6843 |
样件支持,可原厂排单订货! |
|||
DIODES/美台 |
22+ |
TO-251-3 |
20000 |
公司只做原装 品质保障 |
|||
DIODES/美台 |
21+ |
TO-251-3 |
1773 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
DIODES(美台) |
TO-251-3 |
13 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
DIODES/美台 |
2450+ |
TO-251-3 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
DIODES/美台 |
22+ |
TO-251-3 |
12245 |
现货,原厂原装假一罚十! |
|||
DIODES/美台 |
25+ |
TO-251-3 |
20000 |
原装 |
|||
DIODES/美台 |
21+ |
TO-251-3 |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
DIODES/美台 |
23+ |
NA |
12730 |
原装正品代理渠道价格优势 |
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APT13003DI规格书下载地址
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DdatasheetPDF页码索引
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