APT10035价格

参考价格:¥138.3563

型号:APT10035B2FLLG 品牌:Microsemi 备注:这里有APT10035多少钱,2025年最近7天走势,今日出价,今日竞价,APT10035批发/采购报价,APT10035行情走势销售排行榜,APT10035报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

1000V 28A 0.350Ω Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along w

ADPOW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 28A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.37Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

ISC

无锡固电

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally

ADPOW

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V APPLICATIONS ·DC-DC converter ·Battery Chargers ·High speed power switch

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 28A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.37Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

ISC

无锡固电

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

1000V 28A 0.350Ω Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along w

ADPOW

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally

ADPOW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 28A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.35Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

ISC

无锡固电

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件:92.8 Kbytes Page:5 Pages

ADPOW

Power MOS 7is a new generation of low loss, high voltage, N-Channel

文件:86.24 Kbytes Page:5 Pages

Microsemi

美高森美

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件:92.8 Kbytes Page:5 Pages

ADPOW

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件:93.9 Kbytes Page:5 Pages

ADPOW

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件:93.9 Kbytes Page:5 Pages

ADPOW

FREDFETs

Microchip

微芯科技

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件:71.53 Kbytes Page:2 Pages

ADPOW

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件:94.34 Kbytes Page:5 Pages

ADPOW

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件:94.34 Kbytes Page:5 Pages

ADPOW

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件:93.64 Kbytes Page:5 Pages

ADPOW

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件:61.28 Kbytes Page:2 Pages

ADPOW

MOSFET

Microchip

微芯科技

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件:93.64 Kbytes Page:5 Pages

ADPOW

Power MOS 7is a new generation of low loss, high voltage, N-Channel

文件:86.24 Kbytes Page:5 Pages

Microsemi

美高森美

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件:92.8 Kbytes Page:5 Pages

ADPOW

Power MOS 7is a new generation of low loss, high voltage, N-Channel

文件:86.24 Kbytes Page:5 Pages

Microsemi

美高森美

FREDFETs

Microchip

微芯科技

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件:93.9 Kbytes Page:5 Pages

ADPOW

Shielded Bags, Standard and Zipped

文件:30.5 Kbytes Page:1 Pages

3M

Ultra-compact EMC/RFI Filter for Motor Drives Applications

文件:205.17 Kbytes Page:4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Optical Components for Optical Measurement

文件:1.85753 Mbytes Page:28 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

APT10035产品属性

  • 类型

    描述

  • 型号

    APT10035

  • 制造商

    ADPOW

  • 制造商全称

    Advanced Power Technology

  • 功能描述

    Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

更新时间:2025-12-27 16:13:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
APT
2450+
TO247
8850
只做原装正品假一赔十为客户做到零风险!!
MICROCHIP(美国微芯)
24+
TO-264
7793
支持大陆交货,美金交易。原装现货库存。
APT
22+
原厂原封
8200
原装现货库存.价格优势!!
APT
24+
TO247
27950
郑重承诺只做原装进口现货
APTMICR
18+
TO-264L
85600
保证进口原装可开17%增值税发票
APT
22+
TO-3PL
8000
原装正品支持实单
MICROSEMI
638
原装正品
APL
2025+
TO264
3750
全新原厂原装产品、公司现货销售
APT
24+
8866
APT
24+/25+
21
原装正品现货库存价优

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