isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V APPLICATIONS ·DC-DC converter ·Battery Chargers ·High speed power switch

FREDFETs

ROHS

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件：71.53 Kbytes Page：2 Pages

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件：94.34 Kbytes Page：5 Pages

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件：94.34 Kbytes Page：5 Pages

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

1000V 28A 0.350Ω Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along w

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件：61.28 Kbytes Page：2 Pages

Schottky PowerMod

Schottky PowerMod ● Schottky Barrier Rectifier ● Guard Ring for Reverse Protection ● Low forward voltage ● VRRM 30 to 45 Volts ● Electrically isolated base ● Reverse Energy Tested ● Center tap ● ROHS Compliant