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APT1价格

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型号：APT1001R1HN 品牌：Advanced Power Tech 备注：这里有APT1多少钱，2025年最近7天走势，今日出价，今日竞价，APT1批发/采购报价，APT1行情走势销售排行榜，APT1报价。

型号	功能描述	生产厂家企业	LOGO
APT1001	Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Power MOS VI™ is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally	ADPOW	ADPOW
APT100-101DN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID=11A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c	ISC 无锡固电	ISC
APT1001R1AN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 9.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC	ISC 无锡固电	ISC
APT1001R1AVR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching	ADPOW	ADPOW
APT1001R1BN	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	ADPOW	ADPOW
APT1001R1BN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID=10.5A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-	ISC 无锡固电	ISC
APT1001R1BNR	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 10.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
APT1001R1BVFR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body	ADPOW	ADPOW
APT1001R1DN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID=11A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c	ISC 无锡固电	ISC
APT1001R1GN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 10.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
APT1001R1HN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID=9.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-	ISC 无锡固电	ISC
APT1001R1HVR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching	ADPOW	ADPOW
APT1001R2AN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 9A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
APT1001R2BN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID=10A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
APT1001R2HN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID=9A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
APT1001R3AN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 8.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC	ISC 无锡固电	ISC
APT1001R3BN	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	ADPOW	ADPOW
APT1001R3BN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID=10A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
APT1001R3HN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID=9A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
APT1001R6BFLL	POWER MOS 7 R FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally	ADPOW	ADPOW
APT1001R6BFLL	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.6Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co	ISC 无锡固电	ISC
APT1001R6BN	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	ADPOW	ADPOW
APT1001R6SFLL	POWER MOS 7 R FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally	ADPOW	ADPOW
APT1001RAN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 9.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC	ISC 无锡固电	ISC
APT1001RBLC	Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Power MOS VI™ is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally	ADPOW	ADPOW
APT1001RBN	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	ADPOW	ADPOW
APT1001RBN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID=11A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c	ISC 无锡固电	ISC
APT1001RBNR	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c	ISC 无锡固电	ISC
APT1001RBVFR	POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Avalanche Ener	ADPOW	ADPOW
APT1001RBVFR	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c	ISC 无锡固电	ISC
APT1001RBVR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching	ADPOW	ADPOW
APT1001RDN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID=11A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
APT1001RSLC	Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Power MOS VI™ is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally	ADPOW	ADPOW
APT1001RSVFR	POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Avalanche Ener	ADPOW	ADPOW
APT1001RSVR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching	ADPOW	ADPOW
APT1001RSVR	100 Avalanche Tested Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching	Microsemi 美高森美	Microsemi
APT1001RSVRG	100 Avalanche Tested Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching	Microsemi 美高森美	Microsemi
APT10021JFLL	Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally	ADPOW	ADPOW
APT10021JLL	Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally	ADPOW	ADPOW
APT10025JLC	Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Cissand Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally	ADPOW	ADPOW
APT10025JVFR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body	ADPOW	ADPOW
APT10025JVR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching	ADPOW	ADPOW
APT10025JVR	N-Channel MOSFET DESCRIPTION · Drain Current -ID= 34A@ TC=25℃ · Drain Source Voltage -VDSS= 1000V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V APPLICATIONS · DC-DC converter · High speed power switch	ISC 无锡固电	ISC
APT10025PVR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching	ADPOW	ADPOW
APT10026JLL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally	ADPOW	ADPOW
APT10026JN	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV SINGLE DIE ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	ADPOW	ADPOW
APT10026L2FLL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7®combines lower conduction and switching losses along with exceptionally f	ADPOW	ADPOW
APT10026L2FLL	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 38A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.26Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
APT10026L2LL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally	ADPOW	ADPOW
APT1002R4AN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 5.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC	ISC 无锡固电	ISC
APT1002R4BN	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	ADPOW	ADPOW
APT1002R4BN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 6.5A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-	ISC 无锡固电	ISC
APT1002R4CN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
APT1002RAN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
APT1002RBN	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	ADPOW	ADPOW
APT1002RBN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 7A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c	ISC 无锡固电	ISC
APT1002RCN	N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV™ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	ADPOW	ADPOW
APT1002RCN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 5.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
APT1002RDN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 7A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con	ISC 无锡固电	ISC
APT10030L2VFR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Package	ADPOW	ADPOW

APT1产品属性

类型
描述
型号
APT1
制造商
ADPOW
制造商全称
Advanced Power Technology
功能描述
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs

APT1供应商更多...

更新时间：2025-12-25 11:22:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市美思瑞电子科技有限公司	APT1001R1HVR	IR	22+	TO-220	12245	现货,原厂原装假一罚十!	询价
深圳市威尔健半导体有限公司	APT10013R5KVRX	APT	23+	TO-220	50000	全新原装正品现货,支持订货	询价
艾睿（深圳）半导体有限公司	APT1001R1BN	MSC	2447	20	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市一线半导体有限公司	APT1001R1BN	APT	24+	TO-247-3	8866		询价
深圳市科芯源微电子有限公司	APT10013R5KVRX	APT	25+	TO-220	53	原装正品,欢迎来电咨询!	询价
深圳市赛特兴科技有限公司	APT1001R1HVR	APT	QQ咨询	TO-220	828	全新原装研究所指定供货商	询价
深圳市星佑电子有限公司	APT1001R1BVFR	ATP	05+	TO-247	1000	原装进口	询价
深圳市华来深电子有限公司	APT1001R1BN	APT	23+	TO220	8560	受权代理!全新原装现货特价热卖!	询价
深圳市云美电子科技有限公司	APT1001R1BN	APT/晶科电子	24+	TO220	52500	只做全新原装进口现货	询价
深圳市壹芯创科技有限公司	APT1001R1AVR	APT	22+	原厂原封	8200	原装现货库存.价格优势!!	询价

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APT1规格书下载地址

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