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APT1001R6BN

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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POWER MOS 7 R FREDFET

Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.6Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

ISC

无锡固电

POWER MOS 7 R FREDFET

Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally

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POWER MOS 7 R FREDFET

文件:375.54 Kbytes Page:5 Pages

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APT1001R6BN产品属性

  • 类型

    描述

  • 型号

    APT1001R6BN

  • 制造商

    ADPOW

  • 制造商全称

    Advanced Power Technology

  • 功能描述

    N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

更新时间:2026-8-2 16:42:00
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APT
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APT
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NULL
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3562
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APT
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APT
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420
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Microsemi
25+
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7800
公司现货,提供拆样技术支持

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