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APT10025JVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body

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APT10025JVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件:70.81 Kbytes Page:4 Pages

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APT10025JVFR

FREDFETs

MICROCHIP

微芯科技

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件:70.81 Kbytes Page:4 Pages

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Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Cissand Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

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POWER TRANSISTORS(20A,750-850V,250W)

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE The MJ10024 and MJ10025 dartington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper -ated

MOSPEC

统懋

APT10025JVFR产品属性

  • 类型

    描述

  • 型号

    APT10025JVFR

  • 功能描述

    MOSFET N-CH 1000V 34A SOT-227

  • RoHS

  • 类别

    半导体模块 >> FET

  • 系列

    POWER MOS V®

  • 标准包装

    10

  • 系列

    *

更新时间:2026-5-20 11:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
APT
25+
MODULE
442
主打螺丝模块系列
APT
23+
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
100
原装现货,价格优惠
APT
23+
MODULE
7300
专注配单,只做原装进口现货
APT
23+
TO-59
8510
原装正品代理渠道价格优势
APT
23+
TO-220
50000
全新原装正品现货,支持订货
APT
24+
模块
3500
原装现货,可开13%税票
APT
23+
模块
595
全新原装正品,量大可订货!可开17%增值票!价格优势!
APT
24+
28
Microsemi
25+
电联咨询
7800
公司现货,提供拆样技术支持

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