型号 功能描述 生产厂家 企业 LOGO 操作
AOTF2N60

600V, 2A N-Channel MOSFET

文件:148.92 Kbytes Page:6 Pages

AOSMD

万国半导体

AOTF2N60

600V,2A N-Channel MOSFET

文件:165.86 Kbytes Page:6 Pages

AOSMD

万国半导体

AOTF2N60

isc N-Channel MOSFET Transistor

文件:296.04 Kbytes Page:2 Pages

ISC

无锡固电

AOTF2N60

MOSFET:N-Channel

AOS

美国万代

TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h

MOTOROLA

摩托罗拉

TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h

MOTOROLA

摩托罗拉

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N60E is supplied

PHILIPS

飞利浦

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N60E is supplied

PHILIPS

飞利浦

TMOS POWER FET 2.0 AMPERES 600 VOLTS

文件:271.17 Kbytes Page:10 Pages

MOTOROLA

摩托罗拉

AOTF2N60产品属性

  • 类型

    描述

  • 型号

    AOTF2N60

  • 功能描述

    MOSFET N-CH 600V 2A TO220F

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    -

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-3-16 15:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AOS
26+
TO-2203L
86720
全新原装正品价格最实惠 假一赔百
ALPHA&OMEGA万代
2450+
TO220FGDS
6540
只做原装正品假一赔十为客户做到零风险!!
Alpha & Omega Semiconductor In
22+
TO2203
9000
原厂渠道,现货配单
AOS(万代)
2511
标准封装
20000
电子元器件采购降本30%!原厂直采,砍掉中间差价
AOS/万代
23+
TO-220F
24190
原装正品代理渠道价格优势
AOS/万代
2019+
TO220
6700
原厂渠道 可含税出货
AO
24+
TO-220F
19682
公司现货库存 支持实单
AOS/万代
20+
TO-220F
32500
现货很近!原厂很远!只做原装
ALPHA & OMEGA SEMICONDUCTOR
23+
TO220F
28960
原厂授权代理,海外优势订货渠道。可提供大量库存,详
AOS/万代
25+
TO-220F
8000
只有原装

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