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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AOTF11S60 | 600V 11A a MOS Power Transistor General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 |   | |
AOTF11S60 | 600V 11A a MOS General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 | | |
AOTF11S60 | 600V 11A a MOS General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 | | |
AOTF11S60 | N-Channel MOSFET uses advanced trench technology 文件：1.70843 Mbytes Page：5 Pages | DOINGTER 杜因特 | | |
AOTF11S60 | MOSFET：N-Channel | AOS 美国万代 | | |
AOTF11S60 | isc N-Channel MOSFET Transistor 文件：297.75 Kbytes Page：2 Pages | ISC 无锡固电 | | |
600V 11A a MOS General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 | | ||
600V 11A a MOS General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 | | ||
包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH TO220 分立半导体产品 晶体管 - FET，MOSFET - 单个 | ETC 知名厂家 | ETC | | |
N-Channel 650 V (D-S) MOSFET FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 11A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.399Ω (Max) • 100 avalanche tested • Minimum Lot-to | ISC 无锡固电 | | ||
600V 11A a MOS Power Transistor General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 | | ||
N-Channel 650 V (D-S) MOSFET FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light | VBSEMI 微碧半导体 | | ||
600V 11A a MOS General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 | |
AOTF11S60产品属性
- 类型
描述
- 型号
AOTF11S60
- 功能描述
MOSFET N-CH 600V 11A TO220F
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
aMOS™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ALPHA & OMEGA SEMICONDUCTOR |
23+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
AOS/万代 |
2026+ |
TO-220F |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
ALPHA万代 |
26+ |
SOT-23 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
AOS/万代 |
21+ |
TO-220F |
30000 |
优势供应 实单必成 可13点增值税 |
|||
AOS(万代) |
23+ |
标准封装 |
20000 |
正规渠道,只有原装! |
|||
AOS/万代 |
2450+ |
TO-220F |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ALPHA |
18+ |
TO-220F |
85600 |
保证进口原装可开17%增值税发票 |
|||
AOS |
12+ |
TO-220F |
10048 |
||||
AOS |
19+ |
TO-220 |
12000 |
||||
AOS/万代 |
23+ |
TO-220F |
24190 |
原装正品代理渠道价格优势 |
AOTF11S60规格书下载地址
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DdatasheetPDF页码索引
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