位置：首页 > IC中文资料第1829页 > AOTF11S60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AOTF11S60 | 600V 11A a MOS Power Transistor General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 |   | |
AOTF11S60 | 600V 11A a MOS General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 | | |
AOTF11S60 | 600V 11A a MOS General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 | | |
AOTF11S60 | N-Channel MOSFET uses advanced trench technology 文件：1.70843 Mbytes Page：5 Pages | DOINGTER 杜因特 | | |
AOTF11S60 | MOSFET：N-Channel | AOS 美国万代 | | |
AOTF11S60 | isc N-Channel MOSFET Transistor 文件：297.75 Kbytes Page：2 Pages | ISC 无锡固电 | | |
600V 11A a MOS General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 | | ||
600V 11A a MOS General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 | | ||
包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH TO220 分立半导体产品 晶体管 - FET，MOSFET - 单个 | ETC 知名厂家 | ETC | | |
N-Channel 650 V (D-S) MOSFET FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 11A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.399Ω (Max) • 100 avalanche tested • Minimum Lot-to | ISC 无锡固电 | | ||
600V 11A a MOS Power Transistor General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 | | ||
N-Channel 650 V (D-S) MOSFET FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light | VBSEMI 微碧半导体 | | ||
600V 11A a MOS General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 | |
AOTF11S60产品属性
- 类型
描述
- 型号
AOTF11S60
- 功能描述
MOSFET N-CH 600V 11A TO220F
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
aMOS™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS(万代) |
2511 |
标准封装 |
20000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
AOS/万代 |
20+ |
TO-220F |
300000 |
现货很近!原厂很远!只做原装 |
|||
AOS(万代) |
23+ |
标准封装 |
20000 |
正规渠道,只有原装! |
|||
AOS/万代 |
23+ |
TO-220F |
24190 |
原装正品代理渠道价格优势 |
|||
AOS/万代 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
|||
AOS |
24+ |
TO-220F |
19593 |
公司现货库存 支持实单 |
|||
AOS/万代 |
2450+ |
TO-220F |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
AOS万代 |
25+ |
TO-TO-220F |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
AOS |
21+ |
TO-220属封 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Alpha & Omega Semiconductor In |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
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AOTF11S60规格书下载地址
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DdatasheetPDF页码索引
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