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AOT11S60价格
参考价格：￥5.7967
型号：AOT11S60L 品牌：Alpha 备注：这里有AOT11S60多少钱，2026年最近7天走势，今日出价，今日竞价，AOT11S60批发/采购报价，AOT11S60行情走势销售排行榜，AOT11S60报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AOT11S60 | 600V 11A a MOS Power Transistor General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 |   | |
AOT11S60 | 600V 11A a MOS Power Transistor | AOS 美国万代 | | |
AOT11S60 | N-Channel 650 V (D-S) MOSFET 文件：1.033099 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | |
600V 11A a MOS General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 | | ||
600V 11A a MOS General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 | | ||
isc N-Channel MOSFET Transistor 文件：304.4 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
高压MOSFET (500V - 1000V) | AOS 美国万代 | | ||
N-Channel 650 V (D-S) MOSFET FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 11A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.399Ω (Max) • 100 avalanche tested • Minimum Lot-to | ISC 无锡固电 | | ||
600V 11A a MOS Power Transistor General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 | | ||
600V 11A a MOS General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 | | ||
N-Channel 650 V (D-S) MOSFET FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light | VBSEMI 微碧半导体 | |
AOT11S60产品属性
- 类型
描述
- 型号
AOT11S60
- 制造商
SHENZHENFREESCALE
- 制造商全称
ShenZhen FreesCale Electronics. Co., Ltd
- 功能描述
600V 11A a MOS TM Power Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS/万代 |
25+ |
TO220 |
25000 |
AOS/万代全系列在售 |
|||
AOS |
20+ |
TO-220 |
5000 |
||||
AOS/万代 |
23+ |
TO220 |
30000 |
原装正品假一罚十,代理渠道价格优 |
|||
AOS/万代 |
2026+ |
TO-220 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
AOS/ 万代 |
24+ |
TO-220-3 |
19306 |
公司现货库存 支持实单 |
|||
AOS/万代 |
21+ |
TO-220 |
330000 |
优势供应 实单必成 可13点增值税 |
|||
AOS/万代 |
2450+ |
TO-220 |
6540 |
只做原装正品现货或订货假一赔十! |
|||
Alpha & Omega Semiconductor In |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
AOS美国万代 |
25+ |
TOTO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
AOS |
11+ |
TO-220-3 |
170 |
AOT11S60规格书下载地址
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DdatasheetPDF页码索引
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