600V 11A a MOS Power Transistor

General Description The AOD11S60 & AOI11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability th

高压MOSFET (500V - 1000V)

600V 11A αMOS™ Power Transistor

丝印代码：DPAK；isc N-Channel MOSFET Transistor

文件：308.56 Kbytes Page：2 Pages

丝印代码：D2PAK；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 11A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.399Ω (Max) • 100 avalanche tested • Minimum Lot-to

600V 11A a MOS Power Transistor

General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche

600V 11A a MOS TM Power Transistor

General Description The AOW11S60 & AOWF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability t

N-Channel 650 V (D-S) MOSFET

文件：1.033099 Mbytes Page：8 Pages