位置:首页 > IC中文资料 > AOTF11S60L
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AOTF11S60L | 600V 11A a MOS General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 | ||
AOTF11S60L | 600V 11A a MOS General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 | ||
isc N-Channel MOSFET Transistor DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 11A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.399Ω (Max) • 100 avalanche tested • Minimum Lot-to | ISC 无锡固电 | |||
N-Channel 650 V (D-S) MOSFET FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light | VBSEMI 微碧半导体 | |||
600V 11A a MOS Power Transistor General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 | |||
600V 11A a MOS General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche | AOSMD 万国半导体 | |||
N-Channel 650 V (D-S) MOSFET FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light | VBSEMI 微碧半导体 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ALPHA |
18+ |
TO-220F |
85600 |
保证进口原装可开17%增值税发票 |
|||
AOS/万代 |
23+ |
TO-220F |
24190 |
原装正品代理渠道价格优势 |
|||
AOS/万代 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
ALPHA & OMEGA SEMICONDUCTOR |
23+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
AOS美国万代 |
25+ |
TOTO-220F |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
AOS |
16+ |
TO-220F |
220 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Alpha & Omega Semiconductor In |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
AOS |
19+ |
TO-220 |
12000 |
||||
AOS |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
AOS/万代 |
24+ |
TO-220F |
333888 |
只做原装 现货直销 |
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AOTF11S60L规格书下载地址
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DdatasheetPDF页码索引
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