AOT4N60价格

参考价格:¥1.9477

型号:AOT4N60 品牌:Alpha 备注:这里有AOT4N60多少钱,2026年最近7天走势,今日出价,今日竞价,AOT4N60批发/采购报价,AOT4N60行情走势销售排行榜,AOT4N60报价。
型号 功能描述 生产厂家 企业 LOGO 操作
AOT4N60

600V, 4A N-Channel MOSFET

文件:158.26 Kbytes Page:6 Pages

AOSMD

万国半导体

AOT4N60

isc N-Channel MOSFET Transistor

文件:305.57 Kbytes Page:2 Pages

ISC

无锡固电

AOT4N60

600V,4A N-Channel MOSFET

文件:454.49 Kbytes Page:6 Pages

AOSMD

万国半导体

AOT4N60

N-Channel 650 V (D-S) MOSFET

文件:1.08654 Mbytes Page:9 Pages

VBSEMI

微碧半导体

AOT4N60

高压MOSFET (500V - 1000V)

AOS

美国万代

600V,4A N-Channel MOSFET

文件:454.49 Kbytes Page:6 Pages

AOSMD

万国半导体

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

MOTOROLA

摩托罗拉

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block

ONSEMI

安森美半导体

PowerMOS transistors Avalanche energy rated

文件:80.57 Kbytes Page:9 Pages

PHILIPS

飞利浦

PowerMOS transistors Avalanche energy rated

文件:80.57 Kbytes Page:9 Pages

PHILIPS

飞利浦

AOT4N60产品属性

  • 类型

    描述

  • 型号

    AOT4N60

  • 功能描述

    MOSFET N-CH 600V 4A TO-220

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    -

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-3-16 11:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AOS/万代
25+
TO220
25000
AOS/万代全系列在售
AOS/ 万代
24+
TO-220
19528
公司现货库存 支持实单
AOS/万代
23+
TO-220
50000
全新原装正品现货,支持订货
YK/亿科泰
24+
TO-220
7800
全新原厂原装正品现货,低价出售,实单可谈
Alpha & Omega Semiconductor In
22+
TO2203
9000
原厂渠道,现货配单
AOS
23+24
TO220
39820
原装正品优势渠道价格合理.可开13%增值税
AOS
2430+
SOT-252
8540
只做原装正品假一赔十为客户做到零风险!!
AOS/万代
25+
TO-220
30000
代理全新原装现货,价格优势
AO
1932+
TO-220
890
一级代理,专注军工、汽车、医疗、工业、新能源、电力
AOS/ 万代
2026+
TO-220
220
原装正品,欢迎来电咨询!

AOT4N60数据表相关新闻