8 Bit OTP MCU

• 8位RISC CPU内核，4T\n• 3组IO口（最多可支持18个通用IO口，每个IO可单独设定上下拉电阻、开漏模式，支持两种模式的上拉电阻选择）\n• 接口\n• 中断\n• 振荡器\n• 低电压复位LVR（多级复位电压可选,3.6v,3.0v,2.6v,2.4v,2.2v,2.0v）\n• 工作电压2.2V~5.5V@ (内部振荡频率20MHz）\n• 封装形式：SSOP20，SOP16，SOP14，DIP8、SOP8，TSSOP8，QFN20\n\n;

8 Bit OTP MCU

AD1607支持2T和4T的CPU运算模式；CCP为12位CCP模块，支持一路捕获、一路比较、支持扩展成四路12bit分辨率独立PWM功能，支持ADC采集和自启动自关闭。\nLVR提供16种低电压选择，支持低电压中断，同时也支持高电压中断，高电压中断可选择自动强制PB0输出指定电平，可实现电源电压采集；通过编程控制I/O端口的上拉/下拉、开漏等状态，上拉电阻支持两类选择；通过外部中断、PortB中断、LVD中断、TIMER中断、CCP比较模式、WDT溢出和外部复位实现睡眠模式唤醒，有可靠的保证使得程序代码不被读出。\n\n;

Antennas

Axial Lead Rectifiers

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert

MOSFET BROADBAND RF POWER FET

The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50 • Excellent Thermal

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

POWER TRANSISTORS(10A,320-380V,125W)