| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：A1SHB；-20V P-Channel Enhancement Mode MOSFET Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology DMP2123LQ General Features VDS = -20V ID =-2.3A RDS(ON) | LEIDITECH 雷卯电子 |   | ||
丝印代码：A1SHB；-20V P-Channel Enhancement Mode MOSFET Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology IRLML6402 General Features VDS = -20V ID =-2.3A RDS(ON) | LEIDITECH 雷卯电子 | | ||
丝印代码：A1SHB；SOT-23 Plastic-Encapsulate MOSFETS Features TrenchFET Power MOSFET | DGNJDZ 南晶电子 | | ||
丝印代码：A1SHB；-20V P-Channel Enhancement Mode MOSFET Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. The PMV48XPA uses advanced trench technology General Features VDS = -20V ID =-2.3A RDS(ON) | LEIDITECH 雷卯电子 | | ||
丝印代码：A1SHB；P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter | UMW 友台半导体 | | ||
丝印代码：A1SHB；MOSFET FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter | EVVOSEMI 翊欧 | | ||
丝印代码：A1SHB；-20V P-Channel Enhancement Mode MOSFET Description The SQ2301ES uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-2.3A RDS(ON) | LEIDITECH 雷卯电子 | | ||
丝印代码：A1SHB；P-Channel MOSFET FEATURES TrenchFET Power MOSFET | YFWDIODE 佑风微 | | ||
丝印代码：A1SHB；P-Channel Enhancement Mode Field Effect Transistor 文件：840.4 Kbytes Page：5 Pages | ADV 爱德微 | | ||
丝印代码：A1SHB；P-Channel MOSFET uses advanced trench technology 文件：1.52056 Mbytes Page：4 Pages | DOINGTER 杜因特 | | ||
丝印代码：A1SHB；P-Channel MOSFET uses advanced trench technology 文件：1.31493 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
丝印代码：A1SHB；P-Channel MOSFET uses advanced trench technology 文件：1.32122 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
丝印代码：A1SHB；P-Channel Enhancement Mode Power MOSFET 文件：984.29 Kbytes Page：7 Pages | HMSEMI 华之美半导体 | | ||
丝印代码：A1SHB；P-Channel MOSFET 文件：1.60013 Mbytes Page：5 Pages | KEXIN 科信电子 | | ||
丝印代码：A1SHB；LCE P-Channel Enhancement Mode Power MOSFET 文件：1.27168 Mbytes Page：3 Pages | LEIDITECH 雷卯电子 | | ||
丝印代码：A1SHB；P-Channel Enhancement Mode Power MOSFET 文件：1.0054 Mbytes Page：2 Pages | LEIDITECH 雷卯电子 | | ||
丝印代码：A1SHB；LCE P-Channel Enhancement Mode Power MOSFET 文件：1.27227 Mbytes Page：3 Pages | LEIDITECH 雷卯电子 | | ||
丝印代码：A1SHB；P-Channel Enhancement Mode Field Effect Transistor 文件：797.39 Kbytes Page：5 Pages | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | ||
丝印代码：A1SHB；P-Channel Enhancement Mode Field Effect Transistor 文件：1.00535 Mbytes Page：5 Pages | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | ||
丝印代码：A1SHB；P-Channel MOSFET 文件：1.60013 Mbytes Page：5 Pages | KEXIN 科信电子 | | ||
A1SHB | P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features ● VDS = -20V,ID = -2.5A RDS(ON) | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
A1SHB | Process Sealed Subminiature Toggles 文件：259.13 Kbytes Page：7 Pages | NKK 恩楷楷 | | |
A1SHB | P-Channel Enhancement Mode Power MOSFET 文件：380.15 Kbytes Page：6 Pages | BWTECH | | |
General Specifications Distinctive Characteristics Subminiature size saves space on PC boards. Specifically developed for logic-level applications. Totally sealed body construction prevents contact contamination and allows time- and money-saving automated soldering and cleaning. Award-winning STC contact mechanism w | NKK 恩楷楷 | | ||
General Specifications Distinctive Characteristics Subminiature size saves space on PC boards. Specifically developed for logic-level applications. Totally sealed body construction prevents contact contamination and allows time- and money-saving automated soldering and cleaning. Award-winning STC contact mechanism w | NKK 恩楷楷 | | ||
General Specifications Distinctive Characteristics Subminiature size saves space on PC boards. Specifically developed for logic-level applications. Totally sealed body construction prevents contact contamination and allows time- and money-saving automated soldering and cleaning. Award-winning STC contact mechanism w | NKK 恩楷楷 | | ||
General Specifications Distinctive Characteristics Subminiature size saves space on PC boards. Specifically developed for logic-level applications. Totally sealed body construction prevents contact contamination and allows time- and money-saving automated soldering and cleaning. Award-winning STC contact mechanism w | NKK 恩楷楷 | | ||
Process Sealed Subminiature Toggles 文件：259.13 Kbytes Page：7 Pages | NKK 恩楷楷 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
24+ |
SOT-23 |
33000 |
假一赔百原装正品价格优势实单可谈 |
|||
VISHAY/威世 |
23+ |
SOT-23 |
8215 |
原厂原装 |
|||
VISHAY/威世 |
23+24 |
SOT-23-3 |
98541 |
主营VISHAY威世原装正品现货 |
|||
威士 |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
VISHAY |
16+ |
SOT-23 |
999999 |
全新原装进口,拒绝假货,真实库存/特价出货 |
|||
24+ |
N/A |
48000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VISHAY/威世 |
22+ |
SOT-23-3 |
12245 |
现货,原厂原装假一罚十! |
|||
VISHAY/威世 |
25+ |
SOT-23 |
40151 |
VISHAY/威世全新特价SQ2301ES-T1-GE3即刻询购立享优惠#长期有货 |
|||
VISHAY/威世 |
23+ |
SOT-23-3 |
9000 |
原装正品假一罚百!可开增票! |
|||
VISHAY |
23+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
A1SHB芯片相关品牌
A1SHB规格书下载地址
A1SHB参数引脚图相关
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- ad8009
- ad7705
- ad637
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- ad1980
- ad1888
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- a910
- a8180
- a728
- A500
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- a209
- A2000B
- A200025
- A200012
- A200006
- A2000
- A1-SMA1
- A1SKV1
- A1SKV
- A1SKP
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- A1SJ2
- A1SJ
- A1SHW
- A1SHV-GA
- A1SHV1-GA
- A1SHV1
- A1SHV
- A1SHP-JA
- A1SHP-GA
- A1SHP
- A1SHH-JA
- A1SHH-GA
- A1SHH
- A1SHB-JA
- A1SHB-GA
- A1SHB1-JA
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- A1SH
- A1SEW
- A1SEV-GA
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- A1SEB
- A1SE
- A1SAW
- A1SAV1
- A1RKW
- A1RKV1
- A1RKV
- A1RKP
- A1RKH
- A1RKB1
- A1RKB
- A1RK1V1
- A1RK1V
- A1RK1P
- A1RK1H
- A1RK1B1
- A1RK1B
- A1RJ2
- A1-NH-E
- A-1JB
- A1-A7
- A19KW
- A19KV1
A1SHB数据表相关新闻
A1-ILBT06
A1-ILBT06
2023-2-7A180WA原装现货
A180WA原装正品
2021-7-27A1693LKTN-RSNOBH-T抗振型霍尔效应变速箱速度和方向传感器
具有 3 线制接口的 Allegro 符合汽车标准的磁传感器非常适合在旋转的变速箱系统中使用
2019-11-25A2106V
A2106V，全新原装当天发货或门市自取0755-82732291.
2019-3-3A2106V-11
A2106V-11，全新原装当天发货或门市自取0755-82732291.
2019-3-3A2916-双路全桥PWM电机驱动器
UDN2916B，UDN2916EB，并UDN2916LB电机驱动器设计用于驱动一个双极步进电机绕组或双向控制两个直流电机。这两种桥有能力维持45 V和包括内部脉冲宽度调制（PWM）控制输出电流为750毫安。输出都得到了优化低输出饱和压降（小于1.8伏总源，加上在500毫安接收器）。PWM电流控制，最大输出电流为确定用户的选择参考电压和感应电阻。选择两个逻辑电平输入输出电流限制为0，33，67，或100％的最高水平。每座桥的A相输入决定负载电流方向。桥梁包括接地夹和反激式二极管对感应瞬变保护。内部产生的延误防止交叉电流开关电流方向时。特别上电顺序不是必需的。热保护电路禁用的产出，如果芯片温度超
2012-12-7
DdatasheetPDF页码索引
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