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DO2301B

丝印代码:A1SHB;P-Channel MOSFET uses advanced trench technology

文件:1.52056 Mbytes Page:4 Pages

DOINGTER

杜因特

DO2301B

MOSFET

DOINGTER

杜因特

Silicon NPN Transistor High Voltage Horizontal Output

Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Glassivated Base–Collector Junction • Safe Operating Area @ 50µs = 20A, 400V • Switchin

NTE

Reflective Photosensor

文件:49.97 Kbytes Page:2 Pages

PANASONIC

松下

PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications

文件:225.65 Kbytes Page:14 Pages

NSC

国半

PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications

文件:225.65 Kbytes Page:14 Pages

NSC

国半

EXCALIBUR 3-STATE-OUTPUT WIDE-BANDWIDTH POWER OPERATIONAL AMPLIFIER

文件:324.91 Kbytes Page:22 Pages

TI

德州仪器

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