A160晶体管资料
A160别名:A160三极管、A160晶体管、A160晶体三极管
A160生产厂家:
A160制作材料:Si-PNP
A160性质:通用型 (Uni)
A160封装形式:
A160极限工作电压:20V
A160最大电流允许值:0.05A
A160最大工作频率:<1MHZ或未知
A160引脚数:
A160最大耗散功率:0.05W
A160放大倍数:
A160图片代号:NO
A160vtest:20
A160htest:999900
- A160atest:0.05
A160wtest:0.05
A160代换 A160用什么型号代替:3CG110A,
A160价格
参考价格:¥0.0000
型号:A1600 品牌:Switchcraft 备注:这里有A160多少钱,2026年最近7天走势,今日出价,今日竞价,A160批发/采购报价,A160行情走势销售排行榜,A160报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码:A160;Transient Voltage Suppressors (TVS) Data Sheet Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, r epetition r ate (duty cycle): 0.01 | SY 顺烨电子 | |||
丝印代码:A160;Transient Voltage Suppressors (TVS) Data Sheet Features ■ For surface mounted applications in order to optimize board space ■ Low profile package ■ Built-in strain relief ■ Glass passivated junction ■ Low inductance ■ Excellent clamping capability ■ 1000W peak pulse power capability at 10/1000μs waveform, repetition rate (duty cycle): | SHUNYE 顺烨电子 | |||
丝印代码:A160;5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors Features Glass passivated chip 1000W peak pulse power capability with a 10/1000μs waveform Repetitive rate (duty cycle) : 0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260℃/10s at terminals. RoHS compliant | UNSEMI 优恩半导体 | |||
丝印代码:A160;60 V, 1 A power Schottky rectifier Features • Very small conduction losses • Negligible switching losses • Low forward voltage drop • Surface mount miniature packages • Avalanche capability specified • ECOPACK2 compliant | STMICROELECTRONICS 意法半导体 | |||
丝印代码:A160;1000 WATT TVS COMPONENT 文件:454.73 Kbytes Page:7 Pages | PROTEC | |||
丝印代码:A160A;Transient Voltage Suppressors FEATURES Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time Component in accordance to RoHS 2002/95/EC | CTC 沛伦 | |||
丝印代码:A160CA;Transient Voltage Suppressors FEATURES Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time Component in accordance to RoHS 2002/95/EC | CTC 沛伦 | |||
TT-Jax (.173) JACK PANELS TT-Jax® (.173) JACK PANELS | SWITCH | |||
MONOLITHIC POWER MOSFET ARRAY SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | |||
AC Film Capacitors Lighting Features ■ Self-healing properties ■ Low dissipation factor ■ High insulation resisitance Construction ■ Dielectric: polypropylene film ■ Aluminium can ■ Soft polyurethan resin ■ Internal dischage resistor ■ Overpressure disconnector Typical applications For general sine wave applicat | EPCOS 爱普科斯 | |||
Screen Printable Phase Change Material | LSTD 莱尔德 | |||
包装:袋 描述:THERM PAD 457.2MMX457.2MM GRAY 风扇,热管理 热 - 垫,片 | ETC 知名厂家 | ETC | ||
包装:袋 描述:THERM PAD 457.2MMX457.2MM GRAY 风扇,热管理 热 - 垫,片 | ETC 知名厂家 | ETC | ||
Silicone based Thermal Gap Filler | LSTD 莱尔德 | |||
Silicone based Thermal Gap Filler | LSTD 莱尔德 | |||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 文件:1.026849 Mbytes Page:52 Pages | AMD 超威半导体 | |||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 文件:1.026849 Mbytes Page:52 Pages | AMD 超威半导体 | |||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 文件:1.026849 Mbytes Page:52 Pages | AMD 超威半导体 | |||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 文件:1.026849 Mbytes Page:52 Pages | AMD 超威半导体 | |||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 文件:1.026849 Mbytes Page:52 Pages | AMD 超威半导体 | |||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 文件:1.026849 Mbytes Page:52 Pages | AMD 超威半导体 | |||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 文件:1.026849 Mbytes Page:52 Pages | AMD 超威半导体 | |||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 文件:1.026849 Mbytes Page:52 Pages | AMD 超威半导体 | |||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 文件:1.026849 Mbytes Page:52 Pages | AMD 超威半导体 | |||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 文件:1.026849 Mbytes Page:52 Pages | AMD 超威半导体 | |||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 文件:1.026849 Mbytes Page:52 Pages | AMD 超威半导体 | |||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 文件:1.026849 Mbytes Page:52 Pages | AMD 超威半导体 | |||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 文件:1.026849 Mbytes Page:52 Pages | AMD 超威半导体 | |||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 文件:1.026849 Mbytes Page:52 Pages | AMD 超威半导体 | |||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 文件:1.026849 Mbytes Page:52 Pages | AMD 超威半导体 | |||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 文件:1.026849 Mbytes Page:52 Pages | AMD 超威半导体 | |||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 文件:1.026849 Mbytes Page:52 Pages | AMD 超威半导体 | |||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 文件:1.026849 Mbytes Page:52 Pages | AMD 超威半导体 | |||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 文件:1.026849 Mbytes Page:52 Pages | AMD 超威半导体 | |||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 文件:1.026849 Mbytes Page:52 Pages | AMD 超威半导体 | |||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 文件:1.026849 Mbytes Page:52 Pages | AMD 超威半导体 | |||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 文件:1.026849 Mbytes Page:52 Pages | AMD 超威半导体 | |||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 文件:1.026849 Mbytes Page:52 Pages | AMD 超威半导体 | |||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 文件:1.026849 Mbytes Page:52 Pages | AMD 超威半导体 | |||
Axial Lead Rectifiers Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert | MOTOROLA 摩托罗拉 | |||
MOSFET BROADBAND RF POWER FET The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50 • Excellent Thermal | MOTOROLA 摩托罗拉 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und | NEC 瑞萨 | |||
MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly | MOTOROLA 摩托罗拉 | |||
POWER TRANSISTORS(10A,320-380V,125W)
| MOSPEC 统懋 |
A160产品属性
- 类型
描述
- Density (g/cc):
2.80
- Lead Free:
Yes
- Minimum Bondline Thickness (microns):
25
- Minimum Bondline Thickness (mm):
0.03
- Operating Temperature Max (Celsius):
125
- Operating Temperature Min (Celsius):
-40
- Outgassing CVCM (%):
0.400
- Outgassing TML (%):
1.680
- Phase Change Temperature (Deg C):
50
- ROHS Compliant:
Yes
- Shelf Life:
1 year from Date of Shipment
- Static Sensitive:
No
- Thermal Conductivity (W/mK):
3.00
- Thermal Resistance @ 50 psi(C - in2 / W):
0.01
- UL Flammability Rating:
V-0
- Viscosity (cP):
52000
- Volume Resistivity:
3.00 x10^13 Ohm-cm
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
捷捷微 |
24+ |
SMB |
50000 |
只做原装,欢迎询价,量大价优 |
|||
捷捷微 |
23+ |
SMB |
103000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
26+ |
N/A |
47000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
捷捷微 |
24+ |
SMB |
50000 |
全新原装,一手货源,全场热卖! |
|||
捷捷微 |
25+ |
SMB |
50000 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十 |
|||
捷捷微 |
23+ |
SMB |
50000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
A160芯片相关品牌
A160规格书下载地址
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A160数据表相关新闻
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A1611A/ B的1310 nm波长DFB激光器模块专为广播和窄播有线电视应用。该模块是高度线性,OC-48 pinoutcompatible与标准功率的设备产值可达20兆瓦。A1611A/ B模块进行了优化,以协助OEM与1310 nm的CATV发射机设计的客户。其范围的标准,以增强性能规格可用输出功率,确保灵活性有线电视系统设计师需要准确和成本有效地解决任何要求转发路径的应用程序。 特点 的OC -48的引脚兼容 负偏差 112信道加载 会见Telcordia的技术*(Bellcore实验室)468spec
2013-1-2
DdatasheetPDF页码索引
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