7.4 Amps, 600/650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 7N60Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switc

7.4 Amps, 600/650 Volts N-CHANNEL MOSFET

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7.4A, 600V N-CHANNEL POWER MOSFET

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7.4 Amps, 600/650 Volts N-CHANNEL MOSFET

文件：213.02 Kbytes Page：6 Pages

7.4A, 600V N-CHANNEL POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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7.4A, 600V N-CHANNEL POWER MOSFET

文件：184.15 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：180.46 Kbytes Page：6 Pages

N-Channel 650V (D-S) Power MOSFET

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：180.46 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：180.46 Kbytes Page：6 Pages

7.4A, 600V N-CHANNEL POWER MOSFET

文件：184.15 Kbytes Page：6 Pages

7.4A, 600V N-CHANNEL POWER MOSFET

文件：184.15 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：180.46 Kbytes Page：6 Pages

7.4 Amps, 600/650 Volts N-CHANNEL MOSFET

文件：213.02 Kbytes Page：6 Pages

7.4 Amps, 600/650 Volts N-CHANNEL MOSFET

文件：213.02 Kbytes Page：6 Pages

7.4 Amps, 600/650 Volts N-CHANNEL MOSFET

文件：213.02 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：180.46 Kbytes Page：6 Pages

7.4A, 600V N-CHANNEL POWER MOSFET

文件：184.15 Kbytes Page：6 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.10567 Mbytes Page：10 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：180.46 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：180.46 Kbytes Page：6 Pages

7.4A, 600V N-CHANNEL POWER MOSFET

文件：184.15 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：180.46 Kbytes Page：6 Pages

7.4A, 600V N-CHANNEL POWER MOSFET

文件：184.15 Kbytes Page：6 Pages

7.4 Amps, 600/650 Volts N-CHANNEL MOSFET

文件：213.02 Kbytes Page：6 Pages

7.4 Amps, 600/650 Volts N-CHANNEL MOSFET

文件：213.02 Kbytes Page：6 Pages

7.4 Amps, 600/650 Volts N-CHANNEL MOSFET

文件：213.02 Kbytes Page：6 Pages

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

Insulated Gate Bipolar Transistor withr Anti-Parallel Diode

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP7N60E is supplied

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHX7N60E is supplied