7 Amps, 600/650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 7N60Ais a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well su

7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

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7A, 600V N-CHANNEL POWER MOSFET

文件：250.51 Kbytes Page：7 Pages

Fast Switching Speed

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7A 600V N-channel enhanced field effect transistor

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7A, 600V N-CHANNEL POWER MOSFET

7 Amps竊?00Volts N-Channel MOSFET

■ Description The ET7N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ■ Features ● RDS(ON) = 1.20Ω@VGS = 10 V ● Low gate cha

isc N-Channel Mosfet Transistor

• DESCRITION • Designed for high efficiency switch mode power supply. • FEATURES • Drain Current –ID= 7A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) • Avalanche Energy Specified • Fast Switching • Simple Drive Requirem

7.4 Amps, 600 Volts N-CHANNEL MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

7A 600V N-channel Enhancement Mode Power MOSFET

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600V, SMPS Series N-Channel IGBT

The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state v

600V, SMPS Series N-Channel IGBT

The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower

7 Amps, 600/650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 7N60Ais a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well su

7 Amps, 600/650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 7N60Ais a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well su

7 Amps, 600/650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 7N60Ais a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well su

7 Amps, 600/650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 7N60Ais a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well su

7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件：280.9 Kbytes Page：7 Pages

7A, 600V N-CHANNEL POWER MOSFET

文件：250.51 Kbytes Page：7 Pages

600V, SMPS Series N-Channel IGBT

文件：191.58 Kbytes Page：8 Pages

7A, 600V N-CHANNEL POWER MOSFET

文件：250.51 Kbytes Page：7 Pages

7A, 600V N-CHANNEL POWER MOSFET

文件：250.51 Kbytes Page：7 Pages

7A, 600V N-CHANNEL POWER MOSFET

文件：250.51 Kbytes Page：7 Pages

7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件：280.9 Kbytes Page：7 Pages

7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件：280.9 Kbytes Page：7 Pages

7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件：280.9 Kbytes Page：7 Pages

7A, 600V N-CHANNEL POWER MOSFET

文件：250.51 Kbytes Page：7 Pages

7A, 600V N-CHANNEL POWER MOSFET

文件：250.51 Kbytes Page：7 Pages

7A, 600V N-CHANNEL POWER MOSFET

文件：250.51 Kbytes Page：7 Pages

7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件：280.9 Kbytes Page：7 Pages

7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件：280.9 Kbytes Page：7 Pages

7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件：280.9 Kbytes Page：7 Pages