位置:首页 > IC中文资料第10778页 > 7N60A
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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7N60A | 7 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60Ais a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well su | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | ||
7N60A | 7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 文件:280.9 Kbytes Page:7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | ||
7N60A | 7A 600V N-channel enhanced field effect transistor 文件:1.06531 Mbytes Page:7 Pages | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | ||
7N60A | Fast Switching Speed 文件:65.53 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
7N60A | 7A, 600V N-CHANNEL POWER MOSFET 文件:250.51 Kbytes Page:7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | ||
7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7 Amps竊?00Volts N-Channel MOSFET ■ Description The ET7N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ■ Features ● RDS(ON) = 1.20Ω@VGS = 10 V ● Low gate cha | ESTEKEstek Electronics Co. Ltd 伊泰克电子北京伊泰克电子有限公司 | |||
7.4 Amps, 600 Volts N-CHANNEL MOSFET ■ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
isc N-Channel Mosfet Transistor • DESCRITION • Designed for high efficiency switch mode power supply. • FEATURES • Drain Current –ID= 7A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) • Avalanche Energy Specified • Fast Switching • Simple Drive Requirem | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
7A 600V N-channel Enhancement Mode Power MOSFET 文件:898.89 Kbytes Page:11 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体股份有限公司 | |||
600V, SMPS Series N-Channel IGBT The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state v | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
600V, SMPS Series N-Channel IGBT The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower | Intersil Intersil Corporation | |||
7 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60Ais a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well su | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60Ais a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well su | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60Ais a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well su | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60Ais a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well su | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 文件:280.9 Kbytes Page:7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7A, 600V N-CHANNEL POWER MOSFET 文件:250.51 Kbytes Page:7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
600V, SMPS Series N-Channel IGBT 文件:191.58 Kbytes Page:8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
7A, 600V N-CHANNEL POWER MOSFET 文件:250.51 Kbytes Page:7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7A, 600V N-CHANNEL POWER MOSFET 文件:250.51 Kbytes Page:7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7A, 600V N-CHANNEL POWER MOSFET 文件:250.51 Kbytes Page:7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 文件:280.9 Kbytes Page:7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 文件:280.9 Kbytes Page:7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 文件:280.9 Kbytes Page:7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7A, 600V N-CHANNEL POWER MOSFET 文件:250.51 Kbytes Page:7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7A, 600V N-CHANNEL POWER MOSFET 文件:250.51 Kbytes Page:7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7A, 600V N-CHANNEL POWER MOSFET 文件:250.51 Kbytes Page:7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 文件:280.9 Kbytes Page:7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 文件:280.9 Kbytes Page:7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 文件:280.9 Kbytes Page:7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |
7N60A产品属性
- 类型
描述
- 型号
7N60A
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
2470 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FSC |
21+ |
TO-220 |
50 |
原装现货假一赔十 |
|||
UTC |
25+ |
TO-TO-220F |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
FAIRCHILD |
2023+ |
TO-247 |
8700 |
原装现货 |
|||
LRC/乐山无线电 |
22+ |
TO-220F |
50000 |
原装正品现货 |
|||
UTC/友顺 |
23+ |
TO-220F |
79999 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
UTC/友顺 |
20+ |
TO-220 |
32500 |
现货很近!原厂很远!只做原装 |
|||
ADI |
23+ |
TO220 |
7000 |
||||
FAIRCHILD |
25+ |
TO-220F/251 |
188600 |
全新原厂原装正品现货 欢迎咨询 |
|||
UTC/友顺 |
2022+ |
TO-220 |
50000 |
原厂代理 终端免费提供样品 |
7N60A规格书下载地址
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7N60A数据表相关新闻
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原装现货
2020-11-177MB140N-120
7MB140N-120,全新原装当天发货或门市自取0755-82732291.
2020-6-217N65KL-TF1-T
联系人:陈先生 电话:18018738768(微信同号) QQ:1005525513 我司有一手货源,价优,可以长期提供大量,优质的货源,专业的渠道,物美价廉是公司与客户之间共同的理念 由于公司型号众多,无法一一上传,如在网站找不到您要的产品,请联系业务员,本司可提供电子元器件配单服务 我司部分现货库存如下: HR911163A
2020-4-157MBP75KB060
7MBP75KB060,全新原装当天发货或门市自取0755-82732291.
2019-10-16
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