位置：首页 > IC中文资料第10897页 > 7N60L
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
7N60L | 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET ■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi | UTC 友顺 |   | |
7N60L | 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET | UTC 友顺 | | |
7.4 Amps, 600 Volts N-CHANNEL MOSFET ■ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
7.4 Amps, 600 Volts N-CHANNEL MOSFET ■ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi | UTC 友顺 | | ||
7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi | UTC 友顺 | | ||
7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi | UTC 友顺 | | ||
7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi | UTC 友顺 | | ||
7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi | UTC 友顺 | | ||
7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi | UTC 友顺 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.15515 Mbytes Page：11 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：349.51 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS 文件：341.65 Kbytes Page：8 Pages | UTC 友顺 | | ||
7.4A, 600V N-CHANNEL POWER MOSFET 文件：193.88 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：204.93 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：205.31 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE 文件：205.31 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：349.51 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS 文件：341.65 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：205.31 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：204.93 Kbytes Page：6 Pages | UTC 友顺 | | ||
7.4A, 600V N-CHANNEL POWER MOSFET 文件：193.88 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.10669 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL ENHANCEMENT MODE 文件：205.31 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：205.31 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：204.93 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE 文件：205.31 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS 文件：341.65 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：349.51 Kbytes Page：9 Pages | UTC 友顺 | | ||
7.4A, 600V N-CHANNEL POWER MOSFET 文件：193.88 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE 文件：205.31 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：349.51 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS 文件：341.65 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：205.31 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：204.93 Kbytes Page：6 Pages | UTC 友顺 | | ||
7.4A, 600V N-CHANNEL POWER MOSFET 文件：193.88 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS 文件：341.65 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：349.51 Kbytes Page：9 Pages | UTC 友顺 | | ||
7.4A, 600V N-CHANNEL POWER MOSFET 文件：193.88 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE 文件：205.31 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：204.93 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：205.31 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：349.51 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE 文件：205.31 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：349.51 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS 文件：341.65 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：204.93 Kbytes Page：6 Pages | UTC 友顺 | | ||
7.4A, 600V N-CHANNEL POWER MOSFET 文件：193.88 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE 文件：205.31 Kbytes Page：6 Pages | UTC 友顺 | | ||
7.4A, 600V N-CHANNEL POWER MOSFET 文件：193.88 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：349.51 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS 文件：341.65 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：204.93 Kbytes Page：6 Pages | UTC 友顺 | | ||
Insulated Gate Bipolar Transistor This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on) | ONSEMI 安森美半导体 | | ||
Insulated Gate Bipolar Transistor This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on) | MOTOROLA 摩托罗拉 | | ||
Insulated Gate Bipolar Transistor withr Anti-Parallel Diode This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both | ONSEMI 安森美半导体 | | ||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP7N60E is supplied | PHILIPS 飞利浦 | | ||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHX7N60E is supplied | PHILIPS 飞利浦 | |
7N60L产品属性
- 类型
描述
- 型号
7N60L
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
7.4 Amps, 600/650 Volts N-CHANNEL MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC/友顺 |
24+ |
TO-220F |
27950 |
郑重承诺只做原装进口现货 |
|||
UTC/友顺 |
2026+ |
TO-220F |
13889 |
全新原装现货,可出样品,可开增值税发票 |
|||
UTC/友顺 |
25+ |
TO220F |
55000 |
UTC/友顺7N60L-TF3-T即刻询购立享优惠#长期有货 |
|||
VBsemi |
21+ |
TO220 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
UTC/友顺 |
25+ |
TO220F |
15000 |
全新原装现货,价格优势 |
|||
UTC/友顺 |
2450+ |
TO-220F |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
UTC |
25+ |
TO-220 |
1525 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
UTC |
25+23+ |
TO-220 |
24423 |
绝对原装正品全新进口深圳现货 |
|||
UTC/友顺 |
24+ |
NA |
8000 |
只做原装，欢迎询价，量大价优 |
|||
UTC |
2025+ |
TO-220F |
3685 |
全新原厂原装产品、公司现货销售 |
7N60L规格书下载地址
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7N60L数据表相关新闻
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联系人：陈先生 电话：18018738768（微信同号） QQ：1005525513 我司有一手货源，价优，可以长期提供大量，优质的货源，专业的渠道，物美价廉是公司与客户之间共同的理念 由于公司型号众多，无法一一上传，如在网站找不到您要的产品，请联系业务员，本司可提供电子元器件配单服务 我司部分现货库存如下： HR911163A
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2019-10-16
DdatasheetPDF页码索引
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